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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRL3713STRRPBFMOSFET N-CH 30V 260A D2PAK Infineon Technologies |
5,028 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | Surface Mount | 2.5V @ 250µA | 110 nC @ 4.5 V | 30 V | ±20V | 5890 pF @ 15 V | - | - | D2PAK | - | 330W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFR120ZTRLPBFMOSFET N-CH 100V 8.7A DPAK Infineon Technologies |
4,586 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | Surface Mount | 4V @ 250µA | 10 nC @ 10 V | 100 V | ±20V | 310 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 35W (Tc) | -55°C ~ 175°C (TJ) |
|
|
IRLR9343TRLPBFMOSFET P-CH 55V 20A DPAK Infineon Technologies |
5,844 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | Surface Mount | 1V @ 250µA | 47 nC @ 10 V | 55 V | ±20V | 660 pF @ 50 V | - | - | TO-252AA (DPAK) | - | 79W (Tc) | - |
|
AUIRFB3806MOSFET N-CH 60V 43A TO220AB Infineon Technologies |
3,918 | - |
|
数据表 |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | Through Hole | 4V @ 50µA | 30 nC @ 10 V | 60 V | ±20V | 1150 pF @ 50 V | - | - | TO-220AB | - | 71W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP60R600CPN-CHANNEL POWER MOSFET Infineon Technologies |
1,000 | - |
|
数据表 |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | Through Hole | 3.5V @ 220µA | 27 nC @ 10 V | 600 V | ±20V | 550 pF @ 100 V | - | - | PG-TO220-3-1 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
|
IPB60R600CPN-CHANNEL POWER MOSFET Infineon Technologies |
970 | - |
|
数据表 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6.1A (Tc) | 10V | 600mOhm @ 3.3A, 10V | Surface Mount | 3.5V @ 220µA | 27 nC @ 10 V | 600 V | ±20V | 550 pF @ 100 V | - | - | PG-TO263-3-2 | - | 60W (Tc) | -55°C ~ 150°C (TJ) |
|
IPI126N10N3GXKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
456 | - |
|
数据表 |
OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | 6V, 10V | 12.6mOhm @ 46A, 10V | Through Hole | 3.5V @ 46µA | 35 nC @ 10 V | 100 V | ±20V | 2500 pF @ 50 V | - | - | PG-TO262-3 | - | 94W (Tc) | -55°C ~ 175°C (TJ) |
|
IPP100N06S3L-04INN-CHANNEL POWER MOSFET Infineon Technologies |
500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPA60R600E6XKSA1MOSFET N-CH 600V 7.3A TO220-FP Infineon Technologies |
2,379 | - |
|
数据表 |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | Through Hole | 3.5V @ 200µA | 20.5 nC @ 10 V | 600 V | ±20V | 440 pF @ 100 V | - | - | PG-TO220-FP | - | 28W (Tc) | -55°C ~ 150°C (TJ) |
|
IRFH8324TR2PBFMOSFET N-CH 30V 23A/90A PQFN Infineon Technologies |
72 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 23A (Ta), 90A (Tc) | 4.5V, 10V | 4.1mOhm @ 20A, 10V | Surface Mount | 2.35V @ 50µA | 31 nC @ 10 V | 30 V | ±20V | 2380 pF @ 10 V | - | - | PQFN (5x6) | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) |
