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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
GSFD8003

GSFD8003

MOSFET, N-CH, SINGLE, 3.00A, 800

Good-Ark Semiconductor

4,967 -
GSFD8003

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 9 nC @ 10 V 800 V ±30V 390.5 pF @ 25 V - - TO-252 (DPAK) - 80W (Tc) -55°C ~ 150°C (TJ)
SSFD20N08

SSFD20N08

MOSFET, N-CH, SINGLE, 8A, 200V,

Good-Ark Semiconductor

4,878 -
SSFD20N08

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 300mOhm @ 4.5A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 200 V ±20V 540 pF @ 25 V - - TO-252 (DPAK) - 55W (Tc) -55°C ~ 150°C (TJ)
GSFD65R900

GSFD65R900

MOSFET, N-CH, SINGLE, 5.00A, 650

Good-Ark Semiconductor

5,000 -
GSFD65R900

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 650 V ±30V 300 pF @ 100 V - - TO-252 (DPAK) - 42W (Tc) -55°C ~ 150°C (TJ)
GSFD4003

GSFD4003

MOSFET, N-CH, SINGLE, 240.00A, 4

Good-Ark Semiconductor

5,000 -
GSFD4003

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 6V, 10V 3mOhm @ 80A, 10V Surface Mount 3.9V @ 250µA 108 nC @ 10 V 40 V ±20V 5700 pF @ 25 V - - TO-252 (DPAK) - 190W (Tc) -55°C ~ 150°C (TJ)
GSJD60R880

GSJD60R880

MOSFET, N-CH, SINGLE, 5.00A, 600

Good-Ark Semiconductor

4,995 -
GSJD60R880

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 880mOhm @ 2.5A, 10V Surface Mount 4V @ 250µA 12 nC @ 10 V 600 V ±30V 304 pF @ 100 V - - TO-252 (DPAK) - 42W (Tc) -55°C ~ 150°C (TJ)
GSFU8005

GSFU8005

MOSFET, N-CH, SINGLE, 5.00A, 800

Good-Ark Semiconductor

988 -
GSFU8005

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2.7Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 15.16 nC @ 10 V 800 V ±30V 677.1 pF @ 25 V - - TO-220F - 48W (Tc) -55°C ~ 150°C (TJ)
GSFG65R900

GSFG65R900

MOSFET, N-CH, SINGLE, 5.00A, 650

Good-Ark Semiconductor

777 -
GSFG65R900

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 650 V ±30V 300 pF @ 100 V - - TO-251 - 42W (Tc) -55°C ~ 150°C (TJ)
GSFP13010

GSFP13010

MOSFET, N-CH, SINGLE, 50.00A, 10

Good-Ark Semiconductor

10,000 -
GSFP13010

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 29 nC @ 10 V 100 V ±20V 1716 pF @ 50 V - - 8-PPAK (4.9x5.8) - 96W (Tc) -55°C ~ 150°C (TJ)
GSGP2R403

GSGP2R403

MOSFET, N-CH, SINGLE, 100.00A, 3

Good-Ark Semiconductor

10,000 -
GSGP2R403

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2.4mOhm @ 22.5A, 10V Surface Mount 2.2V @ 250µA 39 nC @ 10 V 30 V ±20V 2566 pF @ 15 V - - 8-PPAK (5.1x5.86) - 69W (Tc) -55°C ~ 150°C (TJ)
GSFU2016

GSFU2016

MOSFET, N-CH, SINGLE, 18.00A, 20

Good-Ark Semiconductor

932 -
GSFU2016

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 160mOhm @ 9A, 10V Through Hole 3.9V @ 250µA 41 nC @ 10 V 200 V ±20V 1108 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
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