订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G170P06MMOSFET P-CH 60V 65A TO-263 Goford Semiconductor |
4,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 17mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | 75 nC @ 10 V | 60 V | ±20V | 6451 pF @ 30 V | - | - | TO-263 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT085N10THMOSFET N-CH 100V 70A 100W 8.5m( Goford Semiconductor |
2,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 8.5mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 40 nC @ 10 V | 100 V | ±20V | 2940 pF @ 50 V | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
G65P06TMOSFET P-CH 60V 65A TO-220 Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | Through Hole | 3.5V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT080N10KMOSFET N-CH 100V 65A TO-252 Goford Semiconductor |
10,000 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | Surface Mount | 3V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT52N10TMOSFET N-CH 100V 70A TO-220 Goford Semiconductor |
10,000 | - |
|
数据表 |
SGT | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 9mOhm @ 50A, 10V | Through Hole | 3V @ 250µA | - | - | ±20V | - | - | - | TO-220F | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT1K2P15KMOSFET P-CH 150V 27A 138W 110m(m Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 4.5V, 10V | 110mOhm @ 15A, 10V | Surface Mount | 3V @ 250µA | 86 nC @ 10 V | 150 V | ±20V | 3275 pF @ 75 V | - | - | TO-252 | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT400P10KMOSFET P-CH 100V 35A TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 41 nC @ 10 V | 100 V | ±20V | 3128 pF @ 50 V | - | - | TO-252 | - | 106W (Tc) | -55°C ~ 150°C (TJ) |
|
G65P06KMOSFET P-CH 60V 65A TO-252 Goford Semiconductor |
30,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | Surface Mount | 3.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G900P15KMOSFET P-CH 150V 50A TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 10V | 80mOhm @ 5A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT080N10TMOSFET N-CH 100V 70A TO-220 Goford Semiconductor |
2,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | Through Hole | 3V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
