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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G75P04SMOSFET P-CH 40V 11A SOP-8 Goford Semiconductor |
4,000 | - |
|
数据表 |
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 4.5V, 10V | 8mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-SOP | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) |
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|
G070N06THMOSFET N-CH 60V 110A 160W 6.4m( Goford Semiconductor |
5,000 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 6.4mOhm @ 20A, 10V | Through Hole | 4V @ 250µA | 74 nC @ 10 V | 60 V | ±20V | 6512 pF @ 30 V | - | - | TO-220 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
18N20MOSFET N-CH 200V 18A TO-252 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | Surface Mount | 3V @ 250µA | - | - | ±30V | - | - | - | TO-252 | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) |
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|
G050P03KMOSFET P-CH 30V 85A TO-252 Goford Semiconductor |
10,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 111 nC @ 10 V | 30 V | ±20V | 7533 pF @ -15 V | - | - | TO-252 | - | 100W (Tc) | -55°C ~ 150°C (TJ) |
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|
G60N10KMOSFET N-CH 100V 60A TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 56W (Tc) | -55°C ~ 150°C (TJ) |
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|
G110N06KMOSFET N-CH 60V 110A TO-252 Goford Semiconductor |
20,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 160W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G230P06TMOSFET P-CH 60V 60A TO-220 Goford Semiconductor |
3,000 | - |
|
数据表 |
TrenchFET® | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 20mOhm @ 10A, 10V | Through Hole | 4V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
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G100N03D5MOSFET N-CH 30V 100A DFN5*6-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (4.9x5.75) | - | 50W (Tc) | -55°C ~ 150°C (TJ) |
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|
G230P06FMOSFET P-CH 60V 42A TO-220F Goford Semiconductor |
3,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 23mOhm @ -10A,- 10V | Through Hole | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4669 pF @ -30 V | - | - | TO-220F | - | 67.57W (Tc) | -55°C ~ 150°C (TJ) |
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|
G75P04KMOSFET P-CH 40V 70A TO-252 Goford Semiconductor |
15,000 | - |
|
数据表 |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 10mOhm @ 10A, 20V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 130W (Tc) | -55°C ~ 150°C (TJ) |
