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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT090N06MHMOSFET N-CH 60V 45A 52W 11m(max Goford Semiconductor |
4,000 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 10V | 11mOhm @ 15A, 10V | Surface Mount | 4V @ 250µA | 17 nC @ 10 V | 60 V | ±20V | 1050 pF @ 30 V | - | - | TO-263 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT750P10KMOSFET P-CH 100V 24A 79W TO-252 Goford Semiconductor |
2,500 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 24A (Tc) | 10V | 85mOhm @ 20A, 10V | Surface Mount | 3V @ 250µA | 40 nC @ 10 V | 100 V | ±20V | 1940 pF @ 50 V | - | - | TO-252 | - | 79W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT105N10KMOSFET N-CH 100V 60A TO-252 Goford Semiconductor |
15,000 | - |
|
数据表 |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 10.5mOhm @ 35A, 10V | Surface Mount | 4V @ 250µA | - | - | ±20V | - | - | - | TO-252 | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
GT110N06MMOSFET N-CH 60V 45A 52W 9m(max)@ Goford Semiconductor |
6,400 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Surface Mount | 2.4V @ 250µA | 31 nC @ 10 V | 60 V | ±20V | 1200 pF @ 30 V | - | - | TO-263 | - | 52W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G230P06MMOSFET P-CH 60V 48A 105W TO-263 Goford Semiconductor |
3,200 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 48A (Tc) | 10V | 20mOhm @ 10A, 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4505 pF @ 30 V | - | - | TO-263 | - | 105W (Tc) | -55°C ~ 150°C (TJ) |
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GT095N10D5MOSFET N-CH 100V 55A DFN5*6-8L Goford Semiconductor |
100,000 | - |
|
数据表 |
SGT | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 4.5V, 10V | 11mOhm @ 35A, 10V | Surface Mount | 2.5V @ 250µA | - | - | ±20V | - | - | - | 8-DFN (4.9x5.75) | - | 74W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G230P06KMOSFET P-CH 60V 60A TO-252 Goford Semiconductor |
40,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 10V | 20mOhm @ -10A,- 10V | Surface Mount | 4V @ 250µA | 62 nC @ 10 V | 60 V | ±20V | 4581 pF @ -30 V | - | - | TO-252 | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
|
GT088N06TMOSFET N-CH 60V 60A TO-220 Goford Semiconductor |
50,000 | - |
|
数据表 |
SGT | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60A (Tc) | 4.5V, 10V | 9mOhm @ 14A, 10V | Through Hole | 2.4V @ 250µA | - | - | ±20V | - | - | - | TO-220 | - | 75W (Tc) | -55°C ~ 150°C (TJ) |
|
|
G130N06MMOSFET N-CH 60V 90A TO-263 Goford Semiconductor |
4,000 | - |
|
数据表 |
TrenchFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 90A (Tc) | 4.5V, 10V | 12mOhm @ 20A, 10V | Surface Mount | 2.4V @ 250µA | - | - | ±20V | - | - | - | TO-263 | - | 85W (Tc) | -55°C ~ 150°C (TJ) |
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|
G75P04D5MOSFET P-CH 40V 80A DFN5*6-8L Goford Semiconductor |
10,000 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 4.5V, 10V | 6mOhm @ -20A, -10V | Surface Mount | 2.5V @ 250µA | 106 nC @ 10 V | 40 V | ±20V | 6697 pF @ -20 V | - | - | 8-DFN (4.9x5.75) | - | 115W (Tc) | -55°C ~ 150°C (TJ) |
