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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
25P06

25P06

MOSFET P-CH 60V 25A TO-252

Goford Semiconductor

20,000 -
25P06

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 32mOhm @ 12A, 10V Surface Mount 3V @ 250µA - - ±20V - - - TO-252 - 100W (Tc) -55°C ~ 150°C (TJ)
GT700P08K

GT700P08K

MOSFET P-CH 80V 20A 125W 75m(max

Goford Semiconductor

10,000 -
GT700P08K

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 72mOhm @ 2A, 10V Surface Mount 3.5V @ 250µA 75 nC @ 10 V 60 V ±20V 1615 pF @ 40 V - - TO-252 - 125W (Tc) -55°C ~ 150°C (TJ)
G300P06D5

G300P06D5

MOSFET P-CH 60V 40A DFN5*6-8L

Goford Semiconductor

25,000 -
G300P06D5

数据表

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 30mOhm @ 10A, 10V Surface Mount 3V @ 250µA - - ±20V 2705 pF @ 30 V - - 8-DFN (4.9x5.75) - 50W (Tc) -55°C ~ 150°C (TJ)
GT090N06K

GT090N06K

MOSFET N-CH 60V 45A TO-252

Goford Semiconductor

40,000 -
GT090N06K

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V Surface Mount 2.4V @ 250µA - - ±20V 1088 pF @ 30 V - - TO-252 - 52W (Tc) -55°C ~ 150°C (TJ)
G2K8P15S

G2K8P15S

MOSFET P-CH 150V 2.2A SOP-8

Goford Semiconductor

28,000 -
G2K8P15S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 310mOhm @ 500mA, 10V Surface Mount 3.5V @ 250µA - - ±20V - - - 8-SOP - 2.5W (Tc) -55°C ~ 150°C (TJ)
45P40

45P40

MOSFET P-CH 40V 45A TO-252

Goford Semiconductor

30,000 -
45P40

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 14mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA - - ±20V - - - TO-252 - 80W (Tc) -55°C ~ 150°C (TJ)
G35P04D5

G35P04D5

MOSFET P-CH 40V 35A DFN5*6-8L

Goford Semiconductor

10,000 -
G35P04D5

数据表

TrenchFET® 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 14mOhm @ 15A, 10V Surface Mount 2.3V @ 250µA - - ±20V - - - 8-DFN (4.9x5.75) - 35W (Tc) -55°C ~ 150°C (TJ)
G230P06S

G230P06S

MOSFET P-CH 60V 9A SOP-8L

Goford Semiconductor

12,000 -
G230P06S

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 23mOhm @ 5A, 10V Surface Mount 4V @ 250µA - - ±20V 4784 pF @ 30 V - - 8-SOP - 3W (Tc) -55°C ~ 150°C (TJ)
GT130N10D3

GT130N10D3

MOSFET N-CH 100V 52A DFN3*3-8L

Goford Semiconductor

3,000 -
GT130N10D3

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 52A (Tc) 10V 12.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 100 V ±20V 1254 pF @ 50 V - - 8-DFN (3.15x3.05) - 71W (Tc) -55°C ~ 150°C (TJ)
G630J

G630J

MOSFET N-CH 200V 9A TO-251

Goford Semiconductor

2,000 -
G630J

数据表

TrenchFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 280mOhm @ 4.5A, 10V Through Hole 3V @ 250µA - - ±20V - - - TO-251 - 83W (Tc) -55°C ~ 150°C (TJ)
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