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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7342TRPBFMOSFET 2P-CH 55V 3.4A 8SO Infineon Technologies |
9,036 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 38nC @ 10V | Logic Level Gate | 690pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IPG20N10S436AATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
66,308 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 20A | 36mOhm @ 17A, 10V | 3.5V @ 16µA | 15nC @ 10V | - | 990pF @ 25V | 43W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
BSC112N06LDATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
7,482 | - |
|
数据表 |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 20A (Tc) | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 55nC @ 10V | Logic Level Gate | 4020pF @ 30V | 65W (Tc) | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
|
IAUC60N04S6N031HATMA1MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies |
7,146 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 60A (Tj) | 3.1mOhm @ 30A, 10V | 3V @ 25µA | 30nC @ 10V | - | 1922pF @ 25V | 75W (Tc) | PG-TDSON-8-56 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IRF7351TRPBFMOSFET 2N-CH 60V 8A 8SO Infineon Technologies |
27,053 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 8A | 17.8mOhm @ 8A, 10V | 4V @ 50µA | 36nC @ 10V | Logic Level Gate | 1330pF @ 30V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IPG20N10S4L22ATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
16,793 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 20A | 22mOhm @ 17A, 10V | 2.1V @ 25µA | 27nC @ 10V | Logic Level Gate | 1755pF @ 25V | 60W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IRF7341GTRPBFMOSFET 2N-CH 55V 5.1A 8SO Infineon Technologies |
9,716 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 55V | 5.1A | 50mOhm @ 5.1A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | - | 780pF @ 25V | 2.4W | 8-SO | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
BSG0811NDATMA1MOSFET 2N-CH 25V 19A/41A TISON8 Infineon Technologies |
6,082 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | 25V | 19A, 41A | 3mOhm @ 20A, 10V | 2V @ 250µA | 8.4nC @ 4.5V | Logic Level Gate, 4.5V Drive | 1100pF @ 12V | 2.5W | PG-TISON-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSD223PH6327XTSA1MOSFET 2P-CH 20V 0.39A SOT363 Infineon Technologies |
15,906 | - |
|
数据表 |
OptiMOS™ | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 390mA | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | Logic Level Gate | 56pF @ 15V | 250mW | PG-SOT363-6-1 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSD235NH6327XTSA1MOSFET 2N-CH 20V 0.95A SOT363 Infineon Technologies |
53,649 | - |
|
数据表 |
OptiMOS™ 2 | 6-VSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 950mA | 350mOhm @ 950mA, 4.5V | 1.2V @ 1.6µA | 0.32nC @ 4.5V | Logic Level Gate | 63pF @ 10V | 500mW | PG-SOT363-PO | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
