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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF8915MOSFET 2N-CH 20V 8.9A 8SO Infineon Technologies |
4,173 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 8.9A | 18.3mOhm @ 8.9A, 10V | 2.5V @ 250µA | 7.4nC @ 4.5V | Logic Level Gate | 540pF @ 10V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRFH7911TR2PBFMOSFET 2N-CH 30V 13A/28A PQFN Infineon Technologies |
2,785 | - |
|
数据表 |
- | 18-PowerVQFN | Cut Tape (CT) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 13A, 28A | 8.6mOhm @ 12A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | Logic Level Gate | 1060pF @ 15V | 2.4W, 3.4W | PQFN (5x6) | - | Surface Mount | - | - |
|
IRF7530TRMOSFET 2N-CH 20V 5.4A MICRO8 Infineon Technologies |
6,036 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 5.4A | 30mOhm @ 5.4A, 4.5V | 1.2V @ 250µA | 26nC @ 4.5V | - | 1310pF @ 15V | 1.3W | Micro8™ | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7509TRMOSFET N/P-CH 30V 2.7A/2A MICRO8 Infineon Technologies |
4,361 | - |
|
数据表 |
HEXFET® | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 30V | 2.7A, 2A | 110mOhm @ 1.4A, 10V | 1V @ 250µA | 12nC @ 10V | Logic Level Gate | 210pF @ 25V | 1.25W | Micro8™ | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7501TRMOSFET 2N-CH 20V 2.4A MICRO8 Infineon Technologies |
3,307 | - |
|
数据表 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | Logic Level Gate | 260pF @ 15V | 1.25W | Micro8™ | - | Surface Mount | - | - |
|
|
IRF7507TRMOSFET N/P-CH 20V 2.4A MICRO8 Infineon Technologies |
5,475 | - |
|
数据表 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 20V | 2.4A, 1.7A | 140mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | Logic Level Gate | 260pF @ 15V | 1.25W | Micro8™ | - | Surface Mount | - | - |
|
|
IRF7503TRMOSFET 2N-CH 30V 2.4A MICRO8 Infineon Technologies |
7,454 | - |
|
数据表 |
- | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | Cut Tape (CT) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 2.4A | 135mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | Logic Level Gate | 210pF @ 25V | 1.25W | Micro8™ | - | Surface Mount | - | - |
|
F445MR12W1M1B76BPSA1MOSFET 4N-CH 1200V 25A AG-EASY1B Infineon Technologies |
9,244 | - |
|
数据表 |
EasyPACK™ CoolSiC™ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | - | 1840pF @ 800V | - | AG-EASY1B-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
DF23MR12W1M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
7,900 | - |
|
数据表 |
- | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | 1200V (1.2kV) | 25A | 45mOhm @ 25A, 15V | 5.5V @ 10mA | 620nC @ 15V | - | 2000pF @ 800V | - | AG-EASY1BM-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
F423MR12W1M1B76BPSA1MOSFET 4N-CH 1200V 45A AG-EASY1B Infineon Technologies |
8,739 | - |
|
数据表 |
EasyPACK™ CoolSiC™ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 45A (Tj) | 22.5mOhm @ 50A, 15V | 5.55V @ 20mA | 124nC @ 15V | - | 3680pF @ 800V | - | AG-EASY1B-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
