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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSO4804MOSFET 2N-CH 30V 8A 8DSO Infineon Technologies |
9,433 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 8A | 20mOhm @ 8A, 10V | 2V @ 30µA | 17nC @ 5V | Logic Level Gate | 870pF @ 25V | 2W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9956MOSFET 2N-CH 30V 3.5A 8SO Infineon Technologies |
4,286 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 3.5A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | Logic Level Gate | 190pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9910MOSFET 2N-CH 20V 10A/12A 8SO Infineon Technologies |
7,696 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 10A, 12A | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | Logic Level Gate | 900pF @ 10V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7751MOSFET 2P-CH 30V 4.5A 8TSSOP Infineon Technologies |
5,389 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 4.5A | 35mOhm @ 4.5A, 10V | 2.5V @ 250µA | 44nC @ 10V | Logic Level Gate | 1464pF @ 25V | 1W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSO615CGHUMA1MOSFET N/P-CH 60V 3.1A/2A 8DSO Infineon Technologies |
4,393 | - |
|
数据表 |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 60V | 3.1A, 2A | 110mOhm @ 3.1A, 10V | 2V @ 20µA | 22.5nC @ 10V | Logic Level Gate | 380pF @ 25V | 2W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9953MOSFET 2P-CH 30V 2.3A 8SO Infineon Technologies |
5,167 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 2.3A | 250mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | Logic Level Gate | 190pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF9952MOSFET N/P-CH 30V 3.5A/2.3A 8SO Infineon Technologies |
2,189 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 30V | 3.5A, 2.3A | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | Logic Level Gate | 190pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSO303PHXUMA1MOSFET 2P-CH 30V 7A 8DSO Infineon Technologies |
7,475 | - |
|
数据表 |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 7A | 21mOhm @ 8.2A, 10V | 2V @ 100µA | 49nC @ 10V | Logic Level Gate | 2678pF @ 25V | 2W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRFHM8363TRPBFMOSFET 2N-CH 30V 11A 8PQFN Infineon Technologies |
8,686 | - |
|
数据表 |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 11A | 14.9mOhm @ 10A, 10V | 2.35V @ 25µA | 15nC @ 10V | Logic Level Gate | 1165pF @ 10V | 2.7W | 8-PQFN (3.3x3.3), Power33 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IPG20N04S409ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
2,961 | - |
|
数据表 |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A (Tc) | 8.6mOhm @ 17A, 10V | 4V @ 22µA | 28nC @ 10V | - | 2250pF @ 25V | 54W (Tc) | PG-TDSON-8 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
