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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BSC072N03LDGATMA1MOSFET 2N-CH 30V 11.5A 8TDSON Infineon Technologies |
3,138 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 11.5A | 7.2mOhm @ 20A, 10V | 2.2V @ 250µA | 41nC @ 10V | Logic Level Gate | 3500pF @ 15V | 57W | PG-TDSON-8-4 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7106MOSFET N/P-CH 20V 3A/2.5A 8SO Infineon Technologies |
3,144 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 20V | 3A, 2.5A | 125mOhm @ 1A, 10V | 1V @ 250µA | 25nC @ 10V | - | 300pF @ 15V | 2W | 8-SO | - | Surface Mount | - | - |
|
IRF7752MOSFET 2N-CH 30V 4.6A 8TSSOP Infineon Technologies |
9,072 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4.6A | 30mOhm @ 4.6A, 10V | 2V @ 250µA | 9nC @ 4.5V | Logic Level Gate | 861pF @ 25V | 1W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
AUIRF7342QTRMOSFET 2P-CH 55V 3.4A 8SOIC Infineon Technologies |
5,726 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 55V | 3.4A | 105mOhm @ 3.4A, 10V | 3V @ 250µA | 38nC @ 10V | Logic Level Gate | 690pF @ 25V | 2W | 8-SOIC | -55°C ~ 150°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IRFI4020H-117PMOSFET 2N-CH 200V 9.1A TO220-5 Infineon Technologies |
9,834 | - |
|
数据表 |
- | TO-220-5 Full Pack | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 200V | 9.1A | 100mOhm @ 5.5A, 10V | 4.9V @ 100µA | 29nC @ 10V | - | 1240pF @ 25V | 21W | TO-220-5 Full-Pak | -55°C ~ 150°C (TJ) | Through Hole | - | - |
|
|
IRF7328TRMOSFET 2P-CH 30V 8A 8SO Infineon Technologies |
4,308 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | Logic Level Gate | 2675pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7329TRMOSFET 2P-CH 12V 9.2A 8SO Infineon Technologies |
6,039 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 12V | 9.2A | 17mOhm @ 9.2A, 4.5V | 900mV @ 250µA | 57nC @ 4.5V | Logic Level Gate | 3450pF @ 10V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7314TRPBFMOSFET 2P-CH 20V 5.3A 8SO Infineon Technologies |
1 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 5.3A | 58mOhm @ 2.9A, 4.5V | 700mV @ 250µA | 29nC @ 4.5V | Logic Level Gate | 780pF @ 15V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSC750N10NDGATMA1MOSFET 2N-CH 100V 3.2A 8TDSON Infineon Technologies |
6,455 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 100V | 3.2A | 75mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | - | 720pF @ 50V | 26W | PG-TDSON-8-4 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7750TRPBFMOSFET 2P-CH 20V 4.7A 8TSSOP Infineon Technologies |
7,558 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 4.7A | 30mOhm @ 4.7A, 4.5V | 1.2V @ 250µA | 39nC @ 5V | Logic Level Gate | 1700pF @ 15V | 1W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
