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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
BSO200N03

BSO200N03

MOSFET 2N-CH 30V 6.6A 8DSO

Infineon Technologies

6,276 -
BSO200N03

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.6A 20mOhm @ 7.9A, 10V 2V @ 13µA 8nC @ 5V Logic Level Gate 1010pF @ 15V 1.4W PG-DSO-8 -55°C ~ 150°C (TJ) Surface Mount - -
BSO615CGXUMA1

BSO615CGXUMA1

MOSFET N/P-CH 60V 3.1A 8DSO

Infineon Technologies

2,417 -
BSO615CGXUMA1

数据表

SIPMOS® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel 60V 3.1A (Ta), 2A (Ta) 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V 2V @ 20µA, 2V @ 450µA 22.5nC @ 10V, 20nC @ 10V Logic Level Gate 380pF @ 25V, 460pF @ 25V 2W (Ta) PG-DSO-8 -55°C ~ 150°C (TJ) Surface Mount - -
IRFHM8363TR2PBF

IRFHM8363TR2PBF

MOSFET 2N-CH 30V 11A 8PQFN

Infineon Technologies

7,384 -
IRFHM8363TR2PBF

数据表

- 8-PowerVDFN Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 11A 14.9mOhm @ 10A, 10V 2.35V @ 25µA 15nC @ 10V Logic Level Gate 1165pF @ 10V 2.7W 8-PQFN-Dual (3.3x3.3) - Surface Mount - -
IRF7750TR

IRF7750TR

MOSFET 2P-CH 20V 4.7A 8TSSOP

Infineon Technologies

9,827 -
IRF7750TR

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4.7A 30mOhm @ 4.7A, 4.5V 1.2V @ 250µA 39nC @ 5V Logic Level Gate 1700pF @ 15V 1W 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
IRF7904TRPBF

IRF7904TRPBF

MOSFET 2N-CH 30V 7.6A/11A 8SO

Infineon Technologies

8,987 -
IRF7904TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) 30V 7.6A, 11A 16.2mOhm @ 7.6A, 10V 2.25V @ 25µA 11nC @ 4.5V Logic Level Gate 910pF @ 15V 1.4W, 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7316TR

IRF7316TR

MOSFET 2P-CH 30V 4.9A 8SO

Infineon Technologies

6,941 -
IRF7316TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 4.9A 58mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V Logic Level Gate 710pF @ 25V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7325

IRF7325

MOSFET 2P-CH 12V 7.8A 8SO

Infineon Technologies

5,299 -
IRF7325

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 12V 7.8A 24mOhm @ 7.8A, 4.5V 900mV @ 250µA 33nC @ 4.5V Logic Level Gate 2020pF @ 10V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7901D1TRPBF

IRF7901D1TRPBF

MOSFET 2N-CH 30V 6.2A 8SO

Infineon Technologies

6,031 -
IRF7901D1TRPBF

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.2A 38mOhm @ 5A, 4.5V 1V @ 250µA 10.5nC @ 5V Logic Level Gate 780pF @ 16V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7506TR

IRF7506TR

MOSFET 2P-CH 30V 1.7A MICRO8

Infineon Technologies

3,873 -
IRF7506TR

数据表

- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 1.7A 270mOhm @ 1.2A, 10V 1V @ 250µA 11nC @ 10V Logic Level Gate 180pF @ 25V 1.25W Micro8™ - Surface Mount - -
IRF7750

IRF7750

MOSFET 2P-CH 20V 4.7A 8TSSOP

Infineon Technologies

7,270 -
IRF7750

数据表

HEXFET® 8-TSSOP (0.173", 4.40mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4.7A 30mOhm @ 4.7A, 4.5V 1.2V @ 250µA 39nC @ 5V Logic Level Gate 1700pF @ 15V 1W 8-TSSOP -55°C ~ 150°C (TJ) Surface Mount - -
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