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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
BSO207PNTMA1

BSO207PNTMA1

MOSFET 2P-CH 20V 5.7A 8DSO

Infineon Technologies

8,963 -
BSO207PNTMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 5.7A 45mOhm @ 5.7A, 4.5V 1.2V @ 40µA 23.4nC @ 4.5V Logic Level Gate 1013pF @ 15V 2W PG-DSO-8 -55°C ~ 150°C (TJ) Surface Mount - -
BSO204PNTMA1

BSO204PNTMA1

MOSFET 2P-CH 20V 7A 8DSO

Infineon Technologies

8,336 -
BSO204PNTMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 7A 30mOhm @ 7A, 4.5V 1.2V @ 60µA 35.8nC @ 4.5V Logic Level Gate 1513pF @ 15V 2W PG-DSO-8 -55°C ~ 150°C (TJ) Surface Mount - -
IRF7314PBF

IRF7314PBF

MOSFET 2P-CH 20V 5.3A 8SO

Infineon Technologies

8,158 -
IRF7314PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 5.3A 58mOhm @ 2.9A, 4.5V 700mV @ 250µA 29nC @ 4.5V Logic Level Gate 780pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7319PBF

IRF7319PBF

MOSFET N/P-CH 30V 8SO

Infineon Technologies

5,523 -
IRF7319PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V - 650pF @ 25V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7303PBF

IRF7303PBF

MOSFET 2N-CH 30V 4.9A 8SO

Infineon Technologies

9,143 -
IRF7303PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 4.9A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 10V - 520pF @ 25V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7389PBF

IRF7389PBF

MOSFET N/P-CH 30V 8SO

Infineon Technologies

3,146 -
IRF7389PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 30V - 29mOhm @ 5.8A, 10V 1V @ 250µA 33nC @ 10V Logic Level Gate 650pF @ 25V 2.5W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7105PBF

IRF7105PBF

MOSFET N/P-CH 25V 3.5A/2.3A 8SO

Infineon Technologies

2,300 -
IRF7105PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 25V 3.5A, 2.3A 100mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V - 330pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7304PBF

IRF7304PBF

MOSFET 2P-CH 20V 4.3A 8SO

Infineon Technologies

8,061 -
IRF7304PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4.3A 90mOhm @ 2.2A, 4.5V 700mV @ 250µA 22nC @ 4.5V Logic Level Gate 610pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7103PBF

IRF7103PBF

MOSFET 2N-CH 50V 3A 8SO

Infineon Technologies

7,408 -
IRF7103PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 50V 3A 130mOhm @ 3A, 10V 3V @ 250µA 30nC @ 10V - 290pF @ 25V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF9952PBF

IRF9952PBF

MOSFET N/P-CH 30V 3.5A/2.3A 8SO

Infineon Technologies

2,857 -
IRF9952PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 30V 3.5A, 2.3A 100mOhm @ 2.2A, 10V 1V @ 250µA 14nC @ 10V Logic Level Gate 190pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
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