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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRLHS6276TRPBFMOSFET 2N-CH 20V 4.5A PQFN Infineon Technologies |
5,999 | - |
|
数据表 |
HEXFET® | 6-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 4.5A | 45mOhm @ 3.4A, 4.5V | 1.1V @ 10µA | 3.1nC @ 4.5V | Logic Level Gate | 310pF @ 10V | 1.5W | 6-PQFN Dual (2x2) | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
FF2600UXTR33T2M1BPSA1MOSFET 2N-CH 3300V AG-XHP2K33 Infineon Technologies |
8,488 | - |
|
数据表 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 3300V (3.3kV) | 720A (Tc) | 3.1mOhm @ 750A, 15V | 5.55V @ 675mA | 3750nC @ 15V | Silicon Carbide (SiC) | 152000pF @ 1.8kV | - | AG-XHP2K33 | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
IPG20N04S412ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
8,074 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 12.2mOhm @ 17A, 10V | 4V @ 15µA | 18nC @ 10V | - | 1470pF @ 25V | 41W | PG-TDSON-8-4 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
IPG20N04S4L11AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
8,629 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 11.6mOhm @ 17A, 10V | 2.2V @ 15µA | 26nC @ 10V | Logic Level Gate | 1990pF @ 25V | 41W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
IAUC45N04S6L063HATMA1MOSFET 2N-CH 40V 45A 8TDSON Infineon Technologies |
8,925 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 40V | 45A (Tj) | 6.3mOhm @ 22A, 10V | 2V @ 9µA | 13nC @ 10V | Logic Level Gate | 775pF @ 25V | 41W (Tc) | PG-TDSON-8-57 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q101 |
|
|
IPG20N04S4L07AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
5,928 | - |
|
数据表 |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | Logic Level Gate | 3980pF @ 25V | 65W | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
DF419MR20W3M1HFB11BPSA1MOSFET 4N-CH 2000V 50A AG-EASY3B Infineon Technologies |
1 | - |
|
数据表 |
EasyPACK™ | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel | 2000V (2kV) | 50A (Tj) | 26.5mOhm @ 60A, 18V | 5.15V @ 34mA | 234nC @ 18V | - | 7240pF @ 1.2kV | - | AG-EASY3B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
ISA220280C03LMDSXTMA1ISA220280C03LMDSXTMA1 Infineon Technologies |
7,780 | - |
|
数据表 |
OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V | 6.3A (Ta), 8.4A (Tc), 6.1A (Ta), 8.1A (Tc) | 22mOhm @ 8.4A, 10V, 28mOhm @ 8.1A, 10V | 2.7V @ 1mA | 13.4nC @ 10V | - | 1400pF @ 15V | 1.4W (Ta), 2.5W (Tc) | PG-DSO-8-920 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7328TRPBFMOSFET 2P-CH 30V 8A 8SO Infineon Technologies |
5,840 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 8A | 21mOhm @ 8A, 10V | 2.5V @ 250µA | 78nC @ 10V | Logic Level Gate | 2675pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IQE220N15NM5SCATMA1MOSFET 2N-CH 150V 8WHSON Infineon Technologies |
6,934 | - |
|
数据表 |
OptiMOS™ | 8-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 150V | - | - | - | - | - | - | - | PG-WHSON-8-1 | - | Surface Mount | - | - |
