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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FF17MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
13 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
|
FS33MR12W1M1HB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
3 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
|
FF8MR12W1M1HS4PB11BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
4 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | 1200V (1.2kV) | 100A (Tj) | 8.1mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | - | 8800pF @ 800V | - | AG-EASY1B | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
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|
F3L8MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 85A AG-EASY2B Infineon Technologies |
24 | - |
|
数据表 |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 85A (Tj) | 12mOhm @ 100A, 18V | 5.15V @ 40mA | 297nC @ 18V | - | 8800pF @ 800V | - | AG-EASY2B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FS13MR12W2M1HB70BPSA1MOSFET 6N-CH 1200V 62.5A Infineon Technologies |
15 | - |
|
数据表 |
CoolSiC™ | - | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 62.5A (Tc) | 11.7mOhm @ 62.5A, 18V | 5.15V @ 28mA | 200nC @ 18V | - | 6050pF @ 800V | - | - | - | - | - | - |
|
|
FF6MR12KM1HHPSA1MOSFET Infineon Technologies |
10 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FS55MR12W1M1HB11NPSA1MOSFET 6N-CH 1200V 15A AG-EASY1B Infineon Technologies |
18 | - |
|
数据表 |
EasyPACK™, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (Full Bridge) | 1200V (1.2kV) | 15A (Tj) | 79mOhm @ 15A, 18V | 5.15V @ 6mA | 45nC @ 18V | - | 1350pF @ 800V | - | AG-EASY1B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
FF2MR12W3M1HB11BPSA1MOSFET 4N-CH 1200V AG-EASY3B Infineon Technologies |
17 | - |
|
数据表 |
EasyPACK™, CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | 1200V (1.2kV) | 400A (Tj) | 2.27mOhm @ 400A, 18V | 5.15V @ 224mA | 1600nC @ 18V | - | 48400pF @ 800V | - | AG-EASY3B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FS03MR12A6MA1LBBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD Infineon Technologies |
2 | - |
|
数据表 |
HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | 1200V (1.2kV) | 400A | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | - | 42500pF @ 600V | - | AG-HYBRIDD-2 | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
|
|
DF16MR12W1M1HFB67BPSA1MOSFET 2N-CH 1200V 25A Infineon Technologies |
24 | - |
|
数据表 |
EasyPACK™, CoolSiC™ | - | Tray | Active | - | 2 N-Channel | 1200V (1.2kV) | 25A | 32.3mOhm @ 25A, 18V | 5.15V @ 10mA | 74nC @ 18V | - | 2200pF @ 800V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
