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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FF33MR12W1M1HB11BPSA1MOSFET Infineon Technologies |
23 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
DF14MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
24 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
|
FF11MR12W2M1HPB11BPSA1MOSFET 1200V Infineon Technologies |
18 | - |
|
数据表 |
CoolSiC™ | - | Tray | Active | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF17MR12W1M1HPB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
24 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
|
DF8MR12W1M1HFB67BPSA1MOSFET 2N-CH 1200V 45A AG-EASY1B Infineon Technologies |
22 | - |
|
数据表 |
EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | 1200V (1.2kV) | 45A | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | - | 4400pF @ 800V | - | AG-EASY1B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF17MR12W1M1HB70BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
13 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | 1200V (1.2kV) | - | - | - | - | - | - | - | AG-EASY1B | - | Chassis Mount | - | - |
|
|
FF17MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies |
24 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 50A (Tj) | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | Silicon Carbide (SiC) | 4400pF @ 800V | 20mW | AG-EASY1B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF8MR12W1M1HB70BPSA1MOSFET Infineon Technologies |
20 | - |
|
数据表 |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
FF7MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
24 | - |
|
数据表 |
CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 105A (Tj) | 5.8mOhm @ 120A, 18V | 5.15V @ 56mA | 400nC @ 18V | Silicon Carbide (SiC) | 12100pF @ 800V | 20mW | AG-EASY1B | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF6MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 200A MODULE Infineon Technologies |
18 | - |
|
数据表 |
HEXFET® | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | - | 14700pF @ 800V | - | Module | -40°C ~ 150°C (TJ) | Chassis Mount | - | - |
