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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF7103QMOSFET 2N-CH 50V 3A 8SO Infineon Technologies |
7,887 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 50V | 3A | 130mOhm @ 3A, 10V | 3V @ 250µA | 15nC @ 10V | - | 255pF @ 25V | 2.4W | 8-SO | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
|
IRF7751GTRPBFMOSFET 2P-CH 30V 4.5A 8TSSOP Infineon Technologies |
5,309 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 4.5A | 35mOhm @ 4.5A, 10V | 2.5V @ 250µA | 44nC @ 10V | Logic Level Gate | 1464pF @ 25V | 1W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7757TRPBFMOSFET 2N-CH 20V 4.8A 8TSSOP Infineon Technologies |
2,491 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 4.8A | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | Logic Level Gate | 1340pF @ 15V | 1.2W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF40H233XTMA1MOSFET 2N-CH 40V 8TDSON Infineon Technologies |
4,693 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | - | - | - | - | - | - | - | PG-TDSON-8-900 | - | Surface Mount | - | - |
|
|
IRF7901D1TRMOSFET 2N-CH 30V 6.2A 8SO Infineon Technologies |
5,997 | - |
|
数据表 |
FETKY™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 6.2A | 38mOhm @ 5A, 4.5V | 1V @ 250µA | 10.5nC @ 5V | Logic Level Gate | 780pF @ 16V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSL306NL6327HTSA1MOSFET 2N-CH 30V 2.3A TSOP6-6 Infineon Technologies |
8,936 | - |
|
数据表 |
OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 2.3A | 57mOhm @ 2.3A, 10V | 2V @ 11µA | 1.6nC @ 5V | Logic Level Gate | 275pF @ 15V | 500mW | PG-TSOP6-6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
ITD50N04S4L07ATMA1MOSFET 2N-CH 40V 50A TO252-5 Infineon Technologies |
7,290 | - |
|
数据表 |
OptiMOS™ | TO-252-5, DPAK (4 Leads + Tab), TO-252AD | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel, Common Drain | 40V | 50A (Tc) | 7.2mOhm @ 50A, 10V | 2.2V @ 18µA | 33nC @ 10V | Logic Level Gate | 2480pF @ 25V | 46W (Tc) | PG-TO252-5-311 | -55°C ~ 175°C (TJ) | Surface Mount | Automotive | AEC-Q100 |
|
IRF5851MOSFET N/P-CH 20V 2.7A 6TSOP Infineon Technologies |
4,970 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 20V | 2.7A, 2.2A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | Logic Level Gate | 400pF @ 15V | 960mW | 6-TSOP | - | Surface Mount | - | - |
|
|
IRF5852MOSFET 2N-CH 20V 2.7A 6TSOP Infineon Technologies |
7,666 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tube | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.7A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | Logic Level Gate | 400pF @ 15V | 960mW | 6-TSOP | - | Surface Mount | - | - |
|
|
IRF5852TRMOSFET 2N-CH 20V 2.7A 6TSOP Infineon Technologies |
5,422 | - |
|
数据表 |
HEXFET® | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 2.7A | 90mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 6nC @ 4.5V | Logic Level Gate | 400pF @ 15V | 960mW | 6-TSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
