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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FS03MR12A7MA2BHPSA1MOSFET 6N-CH 1200V 310A Infineon Technologies |
8,397 | - |
|
数据表 |
HybridPACK™ | Module | Box | Active | Silicon Carbide (SiC) | 6 N-Channel | 1200V (1.2kV) | 310A | 2.54mOhm @ 310A, 18V | 4.55V @ 120mA | 870nC @ 18V | Silicon Carbide (SiC) | 25900pF @ 750V | - | - | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF4000UXTR33T2M1BPSA1XHP HV Infineon Technologies |
3,462 | - |
|
数据表 |
XHP™2 | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 3300V (3.3kV) | 500A (Tc) | 4.8mOhm @ 500A, 15V | 5.55V @ 450mA | 2500nC @ 15V | - | 101000pF @ 1800V | - | AG-XHP2K17 | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
FF2000UXTR33T2M1BPSA1MOSFET 2N-CH 3300V 9AG-XHP2K33 Infineon Technologies |
1 | - |
|
数据表 |
CoolSiC™ | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | 3300V (3.3kV) | 925A (Tc) | 2.4mOhm @ 1kA, 15V | 5.55V @ 900mA | 5000nC @ 15V | Silicon Carbide (SiC) | 203000pF @ 1.8kV | - | AG-XHP2K33 | -40°C ~ 175°C (TJ) | Chassis Mount | - | - |
|
|
IRF9956TRPBFXTMA1MOSFET 2N-CH 30V 3.5A 8DSO-902 Infineon Technologies |
7,962 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel | 30V | 3.5A (Ta) | 100mOhm @ 2.2A, 10V | 1V @ 250µA | 14nC @ 10V | - | 190pF @ 15V | 2W (Ta) | PG-DSO-8-902 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
BSO615NMOSFET 2N-CH 60V 2.6A 8DSO Infineon Technologies |
5,986 | - |
|
数据表 |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 2.6A | 150mOhm @ 2.6A, 4.5V | 2V @ 20µA | 20nC @ 10V | Logic Level Gate | 380pF @ 25V | 2W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IPG20N04S418AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
3,791 | - |
|
数据表 |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 40V | 20A (Tc) | 18.4mOhm @ 17A, 10V | 4V @ 8µA | 15nC @ 10V | - | 789pF @ 25V | 26W (Tc) | PG-TDSON-8-10 | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | Automotive | AEC-Q101 |
|
|
BSO612CVMOSFET N/P-CH 60V 3A/2A 8DSO Infineon Technologies |
7,089 | - |
|
数据表 |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 60V | 3A, 2A | 120mOhm @ 3A, 10V | 4V @ 20µA | 15.5nC @ 10V | - | 340pF @ 25V | 2W | PG-DSO-8 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
IRF7343PBFMOSFET N/P-CH 55V 4.7A/3.4A 8SO Infineon Technologies |
6,378 | - |
|
数据表 |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | - | 740pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
IRF7757TRMOSFET 2N-CH 20V 4.8A 8TSSOP Infineon Technologies |
5,308 | - |
|
数据表 |
HEXFET® | 8-TSSOP (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 4.8A | 35mOhm @ 4.8A, 4.5V | 1.2V @ 250µA | 23nC @ 4.5V | Logic Level Gate | 1340pF @ 15V | 1.2W | 8-TSSOP | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
BSO215CMOSFET N/P-CH 20V 3.7A 8SO Infineon Technologies |
2,276 | - |
|
数据表 |
SIPMOS® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | N and P-Channel | 20V | 3.7A | 100mOhm @ 3.7A, 10V | 2V @ 10µA | 11.5nC @ 10V | Logic Level Gate | 246pF @ 25V | 2W | 8-SO | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
