Toshiba Semiconductor and Storage|单个二极管 - 页 8

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
TRS10H120H,S1Q 1200V 3RDGEN SIC-SBD 10A TO-247- Toshiba Semiconductor and Storage	60	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	1148pF @ 1V, 1MHz	38A	-	-	Through Hole	TO-247-2L	175°C
TRS15H120H,S1Q 1200V 3RDGEN SIC-SBD 15A TO-247- Toshiba Semiconductor and Storage	60	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.45 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	1673pF @ 1V, 1MHz	50A	-	-	Through Hole	TO-247-2L	175°C
TRS20H120H,S1Q 1200V 3RDGEN SIC-SBD 20A TO-247- Toshiba Semiconductor and Storage	60	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.45 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 1200 V	2070pF @ 1V, 1MHz	61A	-	-	Through Hole	TO-247-2L	175°C
CUS520,H3F DIODE SCHOTTKY 30V 200MA USC Toshiba Semiconductor and Storage	3,086	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	30 V	280 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 30 V	17pF @ 0V, 1MHz	200mA	-	-	Surface Mount	USC	125°C (Max)
BAS316,H3F DIODE GEN PURP 100V 250MA USC Toshiba Semiconductor and Storage	4	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Standard	100 V	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	3 ns	200 nA @ 80 V	0.35pF @ 0V, 1MHz	250mA	-	-	Surface Mount	USC	150°C (Max)
CUS357,H3F DIODE SCHOTTKY 40V 100MA USC Toshiba Semiconductor and Storage	6,848	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	40 V	600 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 40 V	11pF @ 0V, 1MHz	100mA	-	-	Surface Mount	USC	125°C (Max)
JDH2S02SL,L3F DIODE SCHOTTKY 10V 10MA SL2 Toshiba Semiconductor and Storage	2,449	-	询价单	数据表	-	2-SMD, No Lead	Tape & Reel (TR)	Active	Schottky	10 V	-	Small Signal =< 200mA (Io), Any Speed	-	25 µA @ 500 mV	0.25pF @ 200mV, 1MHz	10mA	-	-	Surface Mount	SL2	125°C (Max)
TRS2E65F,S1Q DIODE SIL CARB 650V 2A TO220-2L Toshiba Semiconductor and Storage	23	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	8.7pF @ 650V, 1MHz	2A	-	-	Through Hole	TO-220-2L	175°C (Max)
1SS196(TE85L,F) DIODE GEN PURP 80V 100MA SC59-3 Toshiba Semiconductor and Storage	2	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	Standard	80 V	1.2 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	500 nA @ 80 V	3pF @ 0V, 1MHz	100mA	-	-	Surface Mount	SC-59-3	125°C (Max)
1SS416CT,L3F DIODE SCHOTTKY 30V 100MA CST2 Toshiba Semiconductor and Storage	24,656	-	询价单	数据表	-	SOD-882	Tape & Reel (TR)	Active	Schottky	30 V	500 mV @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	50 µA @ 30 V	15pF @ 0V, 1MHz	100mA	-	-	Surface Mount	CST2	125°C (Max)

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