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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CMS10I40A(TE12L,QMDIODE SCHOTTKY 40V 1A M-FLAT Toshiba Semiconductor and Storage |
3,000 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | 1A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
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CMS20I40A(TE12L,QMDIODE SCHOTTKY 40V 2A M-FLAT Toshiba Semiconductor and Storage |
6,000 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 520 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | 2A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
CMS20I30A(TE12L,QMDIODE SCHOTTKY 30V 2A M-FLAT Toshiba Semiconductor and Storage |
2,960 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 30 V | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | 2A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
CMS15I40A(TE12L,QMDIODE SCHOTTKY 40V 1.5A M-FLAT Toshiba Semiconductor and Storage |
2,945 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 490 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | 1.5A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
CMS30I40A(TE12L,QMDIODE SCHOTTKY 40V 3A M-FLAT Toshiba Semiconductor and Storage |
2,628 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | 3A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
TRS3E65H,S1QG3 SIC-SBD 650V 3A TO-220-2L Toshiba Semiconductor and Storage |
388 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 199pF @ 1V, 1MHz | 3A | - | - | Through Hole | TO-220-2L | 175°C |
|
|
TRS2E65H,S1QG3 SIC-SBD 650V 2A TO-220-2L Toshiba Semiconductor and Storage |
335 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 135pF @ 1V, 1MHz | 2A | - | - | Through Hole | TO-220-2L | 175°C |
|
|
TRS4V65H,LQG3 SIC-SBD 650V 4A DFN8X8 Toshiba Semiconductor and Storage |
4,648 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.34 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | 4A | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
|
|
TRS4E65H,S1QG3 SIC-SBD 650V 4A TO-220-2L Toshiba Semiconductor and Storage |
341 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | 4A | - | - | Through Hole | TO-220-2L | 175°C |
|
|
TRS6V65H,LQG3 SIC-SBD 650V 6A DFN8X8 Toshiba Semiconductor and Storage |
4,803 | - |
|
数据表 |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | 6A | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
