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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CUHS20F30,H3FDIODE SCHOTTKY 30V 2A US2H Toshiba Semiconductor and Storage |
37,328 | - |
|
数据表 |
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Active | Schottky | 30 V | 470 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 380pF @ 0V, 1MHz | 2A | - | - | Surface Mount | US2H | 150°C (Max) |
|
TRS12E65F,S1QDIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage |
5,715 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 65pF @ 650V, 1MHz | 12A | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
|
TRS6E65F,S1QDIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage |
5,964 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 22pF @ 650V, 1MHz | 6A | - | - | Through Hole | TO-220-2L | 175°C (Max) |
|
TRS6A65F,S1QDIODE SIL CARBIDE 650V 6A TO220F Toshiba Semiconductor and Storage |
8,513 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 22pF @ 650V, 1MHz | 6A | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
|
CUHS20S30,H3FDIODE SCHOTTKY 30V 2A US2H Toshiba Semiconductor and Storage |
21,306 | - |
|
数据表 |
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Active | Schottky | 30 V | 410 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 390pF @ 0V, 1MHz | 2A | - | - | Surface Mount | US2H | 150°C (Max) |
|
|
TRS8A65F,S1QDIODE SIL CARBIDE 650V 8A TO220F Toshiba Semiconductor and Storage |
1 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 28pF @ 650V, 1MHz | 8A | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
|
CRS20I40B(TE85L,QMDIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage |
4,727 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 40 V | 520 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | 2A | - | - | Surface Mount | S-FLAT (1.6x3.5) | 150°C (Max) |
|
CRS08(TE85L,Q,M)DIODE SCHOTTKY 30V 1.5A S-FLAT Toshiba Semiconductor and Storage |
9,332 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 30 V | 360 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | 90pF @ 10V, 1MHz | 1.5A | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
|
CMS10I30A(TE12L,QMDIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage |
6,520 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 30 V | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | 1A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
|
|
CRS04(TE85L,Q,M)DIODE SCHOTTKY 40V 1A S-FLAT Toshiba Semiconductor and Storage |
51,446 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 40 V | 510 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 47pF @ 10V, 1MHz | 1A | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
