Toshiba Semiconductor and Storage|单个二极管 - 页 7

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
CMS04(TE12L) DIODE SCHOTTKY 30V 5A MFLAT Toshiba Semiconductor and Storage	5,547	-	询价单	数据表	-	SOD-128	Cut Tape (CT)	Obsolete	Schottky	30 V	370 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	8 mA @ 30 V	-	5A	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 125°C
CMF03(TE12L,Q,M) DIODE GEN PURP 900V 500MA M-FLAT Toshiba Semiconductor and Storage	2,521	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Last Time Buy	Standard	900 V	2.5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 900 V	-	500mA	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 125°C
TRS8V65H,LQ G3 SIC-SBD 650V 8A DFN8X8 Toshiba Semiconductor and Storage	2,000	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	8A	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
CUHS20F60,H3F DIODE SCHOTTKY 60V 2A US2H Toshiba Semiconductor and Storage	205	-	询价单	数据表	-	2-SMD, Flat Leads	Tape & Reel (TR)	Active	Schottky	60 V	590 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 60 V	300pF @ 0V, 1MHz	2A	-	-	Surface Mount	US2H	150°C
CMH07(TE12L,Q,M) DIODE GEN PURP 200V 2A M-FLAT Toshiba Semiconductor and Storage	924	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Active	Standard	200 V	980 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	10 µA @ 200 V	-	2A	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CRS20I40A(TE85L,QM DIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage	470	-	询价单	数据表	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	40 V	600 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	60 µA @ 40 V	35pF @ 10V, 1MHz	2A	-	-	Surface Mount	S-FLAT (1.6x3.5)	150°C (Max)
TRS12A65F,S1Q DIODE SIL CARB 650V 12A TO220F Toshiba Semiconductor and Storage	40	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	44pF @ 650V, 1MHz	12A	-	-	Through Hole	TO-220F-2L	175°C (Max)
1SS401(TE85L,F) DIODE SCHOTTKY 20V 300MA SC70 Toshiba Semiconductor and Storage	135	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Active	Schottky	20 V	450 mV @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 20 V	46pF @ 0V, 1MHz	300mA	-	-	Surface Mount	SC-70	125°C (Max)
CRG07(TE85L,Q,M) DIODE GEN PURP 400V 700MA S-FLAT Toshiba Semiconductor and Storage	145	-	询价单	数据表	-	SOD-123F	Tape & Reel (TR)	Active	Standard	400 V	1.1 V @ 700 mA	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 400 V	-	700mA	-	-	Surface Mount	S-FLAT (1.6x3.5)	175°C (Max)
TRS10E65H,S1Q G3 SIC-SBD 650V 10A TO-220-2L Toshiba Semiconductor and Storage	68	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220-2L	175°C

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