Toshiba Semiconductor and Storage|单个二极管 - 页 9

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
CUS08F30,H3F DIODE SCHOTTKY 30V 800MA USC Toshiba Semiconductor and Storage	709,808	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	30 V	450 mV @ 800 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	170pF @ 0V, 1MHz	800mA	-	-	Surface Mount	USC	125°C (Max)
1SS397TE85LF DIODE GEN PURP 400V 100MA SC70 Toshiba Semiconductor and Storage	6,818	-	询价单	数据表	-	SC-70, SOT-323	Tape & Reel (TR)	Active	Standard	400 V	1.3 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	500 ns	1 µA @ 400 V	5pF @ 0V, 1MHz	100mA	-	-	Surface Mount	SC-70	125°C (Max)
CMF04(TE12L,Q,M) DIODE GEN PURP 800V 500MA M-FLAT Toshiba Semiconductor and Storage	7,611	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Active	Standard	800 V	2.5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	50 µA @ 800 V	-	500mA	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CUS10S30,H3F DIODE SCHOTTKY 30V 1A USC Toshiba Semiconductor and Storage	80,432	-	询价单	数据表	-	SC-76, SOD-323	Tape & Reel (TR)	Active	Schottky	30 V	230 mV @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	135pF @ 0V, 1MHz	1A	-	-	Surface Mount	USC	125°C (Max)
TRS3E65F,S1Q DIODE SIL CARB 650V 3A TO220-2L Toshiba Semiconductor and Storage	9,681	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	12pF @ 650V, 1MHz	3A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS4E65F,S1Q DIODE SIL CARB 650V 4A TO220-2L Toshiba Semiconductor and Storage	9,142	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	4A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS8E65F,S1Q DIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage	8,401	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	28pF @ 650V, 1MHz	8A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10E65F,S1Q DIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage	3,742	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	10A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10A65F,S1Q DIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage	4,007	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	36pF @ 650V, 1MHz	10A	-	-	Through Hole	TO-220F-2L	175°C (Max)
TRS4A65F,S1Q DIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage	4,029	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	16pF @ 650V, 1MHz	4A	-	-	Through Hole	TO-220F-2L	175°C (Max)

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