Toshiba Semiconductor and Storage|单个二极管 - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
TRS6E65H,S1Q G3 SIC-SBD 650V 6A TO-220-2L Toshiba Semiconductor and Storage	194	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	392pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220-2L	175°C
TRS8E65H,S1Q G3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage	338	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220-2L	175°C
TRS10V65H,LQ G3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage	3,975	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	10A	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
TRS12V65H,LQ G3 SIC-SBD 650V 12A DFN8X8 Toshiba Semiconductor and Storage	4,472	-	询价单	数据表	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	12A	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
TRS12E65H,S1Q G3 SIC-SBD 650V 12A TO-220-2L Toshiba Semiconductor and Storage	370	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 650 V	778pF @ 1V, 1MHz	12A	-	-	Through Hole	TO-220-2L	175°C
CRS01(TE85L) DIODE SCHOTTKY 30V 1A SFLAT Toshiba Semiconductor and Storage	4,339	-	询价单	数据表	-	SOD-123F	Cut Tape (CT)	Obsolete	Schottky	30 V	360 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	-	1A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CRS04(TE85L) DIODE SCHOTTKY 40V 1A SFLAT Toshiba Semiconductor and Storage	8,460	-	询价单	数据表	-	SOD-123F	Cut Tape (CT)	Obsolete	Schottky	40 V	510 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	-	1A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS09(TE85L) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	7,862	-	询价单	数据表	-	SOD-123F	Cut Tape (CT)	Obsolete	Schottky	30 V	460 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 30 V	-	1.5A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS08(TE85L) DIODE SCHOTTKY 30V 1.5A SFLAT Toshiba Semiconductor and Storage	6,486	-	询价单	数据表	-	SOD-123F	Cut Tape (CT)	Obsolete	Schottky	30 V	360 mV @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 30 V	-	1.5A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CRH01(TE85L) DIODE SWITCHING 200V 1A SFLAT Toshiba Semiconductor and Storage	9,367	-	询价单	数据表	-	SOD-123F	Cut Tape (CT)	Obsolete	Standard	200 V	980 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	-	1A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 150°C

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