Toshiba Semiconductor and Storage|单个二极管 - 页 23

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
CRS30I30A(TE85L,QM DIODE SCHOTTKY 30V 3A S-FLAT Toshiba Semiconductor and Storage	1,977	-	询价单	数据表	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	30 V	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	82pF @ 10V, 1MHz	3A	-	-	Surface Mount	S-FLAT (1.6x3.5)	150°C (Max)
CRS05(TE85L,Q,M) DIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage	8,990	-	询价单	数据表	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	30 V	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	-	1A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 150°C
CRS11(TE85L,Q,M) DIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage	17,525	-	询价单	数据表	-	SOD-123F	Tape & Reel (TR)	Active	Schottky	30 V	360 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 30 V	-	1A	-	-	Surface Mount	S-FLAT (1.6x3.5)	-40°C ~ 125°C
CMS30I30A(TE12L,QM DIODE SCHOTTKY 30V 3A M-FLAT Toshiba Semiconductor and Storage	2,837	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Active	Schottky	30 V	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	82pF @ 10V, 1MHz	3A	-	-	Surface Mount	M-FLAT (2.4x3.8)	150°C (Max)
CMH05A(TE12L,Q,M) DIODE GEN PURP 400V 1A M-FLAT Toshiba Semiconductor and Storage	6,518	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Obsolete	Standard	400 V	1.8 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	1A	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMH08A(TE12L,Q,M) DIODE GEN PURP 400V 2A M-FLAT Toshiba Semiconductor and Storage	4,353	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Obsolete	Standard	400 V	1.8 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	-	2A	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 150°C
CMS14(TE12L,Q,M) DIODE SCHOTTKY 60V 2A M-FLAT Toshiba Semiconductor and Storage	2,388	-	询价单	数据表	-	SOD-128	Tape & Reel (TR)	Active	Schottky	60 V	580 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	2A	-	-	Surface Mount	M-FLAT (2.4x3.8)	-40°C ~ 150°C
TRS6E65C,S1AQ DIODE SIL CARB 650V 6A TO220-2L Toshiba Semiconductor and Storage	5,245	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	35pF @ 650V, 1MHz	6A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS12E65C,S1Q DIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage	3,177	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 170 V	65pF @ 650V, 1MHz	12A	-	-	Through Hole	TO-220-2L	175°C (Max)
TRS10E65C,S1Q DIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage	4,224	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	-	10A	-	-	Through Hole	TO-220-2L	175°C (Max)

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