富聪科技订单满¥1000免运费
关注我们:

单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CLH07(TE16L,NMB,Q)

CLH07(TE16L,NMB,Q)

DIODE GEN PURP 400V 5A L-FLAT

Toshiba Semiconductor and Storage

3,498 -
CLH07(TE16L,NMB,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 400 V 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - 5A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH07(TE16R,Q)

CLH07(TE16R,Q)

DIODE GEN PURP 400V 5A L-FLAT

Toshiba Semiconductor and Storage

4,531 -
CLH07(TE16R,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 400 V 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - 5A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLS01(T6LSONY,Q)

CLS01(T6LSONY,Q)

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

2,161 -
CLS01(T6LSONY,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 30 V 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS01(TE16L,PAS,Q)

CLS01(TE16L,PAS,Q)

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

3,213 -
CLS01(TE16L,PAS,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 30 V 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS01(TE16R,Q)

CLS01(TE16R,Q)

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

7,583 -
CLS01(TE16R,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 30 V 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS01,LFJFQ(O

CLS01,LFJFQ(O

DIODE SCHOTTKY 30V 10A L-FLAT

Toshiba Semiconductor and Storage

2,274 -
CLS01,LFJFQ(O

数据表

- L-FLAT™ Bulk Obsolete Schottky 30 V 470 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 30 V 530pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS02(T6L,CANO-O,Q

CLS02(T6L,CANO-O,Q

DIODE SCHOTTKY 40V 10A L-FLAT

Toshiba Semiconductor and Storage

2,625 -
CLS02(T6L,CANO-O,Q

数据表

- L-FLAT™ Bulk Obsolete Schottky 40 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 420pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS02(T6L,CLAR,Q)

CLS02(T6L,CLAR,Q)

DIODE SCHOTTKY 40V 10A L-FLAT

Toshiba Semiconductor and Storage

4,300 -
CLS02(T6L,CLAR,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 40 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 420pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS02(TE16L,HIT,Q)

CLS02(TE16L,HIT,Q)

DIODE SCHOTTKY 40V 10A L-FLAT

Toshiba Semiconductor and Storage

3,628 -
CLS02(TE16L,HIT,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 40 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 420pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
CLS02(TE16L,SQC,Q)

CLS02(TE16L,SQC,Q)

DIODE SCHOTTKY 40V 10A L-FLAT

Toshiba Semiconductor and Storage

3,240 -
CLS02(TE16L,SQC,Q)

数据表

- L-FLAT™ Bulk Obsolete Schottky 40 V 550 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 420pF @ 10V, 1MHz 10A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 125°C
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户