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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
DSF07S30U(TPH3,F)

DSF07S30U(TPH3,F)

DIODE SCHOTTKY 30V 700MA USC

Toshiba Semiconductor and Storage

7,763 -
DSF07S30U(TPH3,F)

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 450 mV @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 170pF @ 0V, 1MHz 700mA - - Surface Mount USC 125°C (Max)
DSF05S30U(TPH3,F)

DSF05S30U(TPH3,F)

DIODE SCHOTTKY 30V 500MA USC

Toshiba Semiconductor and Storage

4,079 -
DSF05S30U(TPH3,F)

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 450 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) - - - 500mA - - Surface Mount USC 125°C (Max)
BAS516,H3F

BAS516,H3F

DIODE GEN PURP 100V 250MA ESC

Toshiba Semiconductor and Storage

7,584 -
BAS516,H3F

数据表

- SC-79, SOD-523 Tape & Reel (TR) Active Standard 100 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 3 ns 200 nA @ 80 V 0.35pF @ 0V, 1MHz 250mA - - Surface Mount ESC 150°C (Max)
1SS385FV,L3F

1SS385FV,L3F

DIODE SCHOTTKY 10V 100MA VESM

Toshiba Semiconductor and Storage

5,452 -
1SS385FV,L3F

数据表

- SOT-723 Tape & Reel (TR) Active Schottky 10 V 500 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 20 µA @ 10 V 20pF @ 0V, 1MHz 100mA - - Surface Mount VESM 125°C (Max)
1SS321,LF

1SS321,LF

DIODE SCHOTTKY 10V 50MA S-MINI

Toshiba Semiconductor and Storage

40,271 -
1SS321,LF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 10 V 1 V @ 50 mA Small Signal =< 200mA (Io), Any Speed - 500 nA @ 10 V 3.2pF @ 0V, 1MHz 50mA - - Surface Mount S-Mini 125°C (Max)
1SS322(TE85L,F)

1SS322(TE85L,F)

DIODE SCHOTTKY 40V 100MA USM

Toshiba Semiconductor and Storage

5,941 -
1SS322(TE85L,F)

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active Schottky 40 V 600 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 18pF @ 0V, 1MHz 100mA - - Surface Mount USM 125°C (Max)
1SS403E,L3F

1SS403E,L3F

DIODE GEN PURP 200V 100MA ESC

Toshiba Semiconductor and Storage

1,220 -
1SS403E,L3F

数据表

- SC-79, SOD-523 Tape & Reel (TR) Active Standard 200 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 60 ns 1 µA @ 200 V 3pF @ 0V, 1MHz 100mA - - Surface Mount ESC 150°C (Max)
DSR01S30SL,L3F

DSR01S30SL,L3F

DIODE SCHOTTKY 30V 100MA SL2

Toshiba Semiconductor and Storage

65,775 -
DSR01S30SL,L3F

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Schottky 30 V 620 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 700 nA @ 30 V 8.2pF @ 0V, 1MHz 100mA - - Surface Mount SL2 125°C (Max)
1SS190TE85LF

1SS190TE85LF

DIODE GEN PURP 80V 100MA SC59-3

Toshiba Semiconductor and Storage

27,932 -
1SS190TE85LF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 80 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 4pF @ 0V, 1MHz 100mA - - Surface Mount SC-59-3 125°C (Max)
1SS394TE85LF

1SS394TE85LF

DIODE SCHOTTKY 10V 100MA SC59

Toshiba Semiconductor and Storage

6,639 -
1SS394TE85LF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 10 V 500 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 20 µA @ 10 V 40pF @ 0V, 1MHz 100mA - - Surface Mount SC-59 125°C (Max)
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