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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CMF01(TE12L,Q,M)

CMF01(TE12L,Q,M)

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

3,412 -
CMF01(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Obsolete Standard 600 V 2 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 2A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CRG01(TE85L,Q,M)

CRG01(TE85L,Q,M)

DIODE GEN PURP 100V 700MA S-FLAT

Toshiba Semiconductor and Storage

9,926 -
CRG01(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Obsolete Standard 100 V 1.1 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V - 700mA - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRG02(TE85L,Q,M)

CRG02(TE85L,Q,M)

DIODE GEN PURP 400V 700MA S-FLAT

Toshiba Semiconductor and Storage

5,394 -
CRG02(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Obsolete Standard 400 V 1.1 V @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 700mA - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRG03(TE85L,Q,M)

CRG03(TE85L,Q,M)

DIODE GEN PURP 400V 1A S-FLAT

Toshiba Semiconductor and Storage

3,193 -
CRG03(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Obsolete Standard 400 V 1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 1A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRG04(TE85L,Q,M)

CRG04(TE85L,Q,M)

DIODE GEN PURP 600V 1A S-FLAT

Toshiba Semiconductor and Storage

5,784 -
CRG04(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Obsolete Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V - 1A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
1SS413CT,L3F

1SS413CT,L3F

DIODE SCHOTTKY 20V 50MA SOD882

Toshiba Semiconductor and Storage

38,680 -
1SS413CT,L3F

数据表

- SOD-882 Tape & Reel (TR) Active Schottky 20 V 550 mV @ 50 mA Small Signal =< 200mA (Io), Any Speed - 500 nA @ 20 V 3.9pF @ 0V, 1MHz 50mA - - Surface Mount CST2 -55°C ~ 125°C
CUS01(TE85L,Q,M)

CUS01(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A US-FLAT

Toshiba Semiconductor and Storage

9,342 -
CUS01(TE85L,Q,M)

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 390 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V - 1A - - Surface Mount US-FLAT (1.25x2.5) -40°C ~ 125°C
CUS02(TE85L,Q,M)

CUS02(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A US-FLAT

Toshiba Semiconductor and Storage

3,358 -
CUS02(TE85L,Q,M)

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 30 V 470 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V - 1A - - Surface Mount US-FLAT (1.25x2.5) -40°C ~ 150°C
CRF03(TE85L,Q,M)

CRF03(TE85L,Q,M)

DIODE GEN PURP 600V 700MA S-FLAT

Toshiba Semiconductor and Storage

5,154 -
CRF03(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Obsolete Standard 600 V 2 V @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 700mA - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
U1GWJ49(TE12L,F)

U1GWJ49(TE12L,F)

DIODE SCHOTTKY 40V 1A PW-MINI

Toshiba Semiconductor and Storage

8,245 -
U1GWJ49(TE12L,F)

数据表

- TO-243AA Tape & Reel (TR) Obsolete Schottky 40 V 550 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 1A - - Surface Mount PW-MINI -40°C ~ 125°C
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