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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CMS03(TE12L,Q,M)

CMS03(TE12L,Q,M)

DIODE SCHOTTKY 30V 3A M-FLAT

Toshiba Semiconductor and Storage

41,909 -
CMS03(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 30 V 450 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - 3A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMS11(TE12L,Q,M)

CMS11(TE12L,Q,M)

DIODE SCHOTTKY 40V 2A M-FLAT

Toshiba Semiconductor and Storage

11,953 -
CMS11(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 40 V 550 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V 95pF @ 10V, 1MHz 2A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMS01(TE12L,Q,M)

CMS01(TE12L,Q,M)

DIODE SCHOTTKY 30V 3A M-FLAT

Toshiba Semiconductor and Storage

3,500 -
CMS01(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 30 V 370 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 30 V - 3A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 125°C
CMS16(TE12L,Q,M)

CMS16(TE12L,Q,M)

DIODE SCHOTTKY 40V 3A M-FLAT

Toshiba Semiconductor and Storage

2,475 -
CMS16(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 40 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - 3A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMS15(TE12L,Q,M)

CMS15(TE12L,Q,M)

DIODE SCHOTTKY 60V 3A M-FLAT

Toshiba Semiconductor and Storage

2,220 -
CMS15(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 60 V 580 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 60 V 102pF @ 10V, 1MHz 3A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMH01(TE12L,Q,M)

CMH01(TE12L,Q,M)

DIODE GEN PURP 200V 3A M-FLAT

Toshiba Semiconductor and Storage

2,743 -
CMH01(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Standard 200 V 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 10 µA @ 200 V - 3A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CUS521,H3F

CUS521,H3F

DIODE SCHOTTKY 30V 200MA USC

Toshiba Semiconductor and Storage

4,250 -
CUS521,H3F

数据表

- SC-76, SOD-323 Tape & Reel (TR) Active Schottky 30 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 30 µA @ 30 V 26pF @ 0V, 1MHz 200mA - - Surface Mount USC 125°C (Max)
1SS187,LF

1SS187,LF

DIODE GEN PURP 80V 100MA S-MINI

Toshiba Semiconductor and Storage

3,027 -
1SS187,LF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 80 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 4pF @ 0V, 1MHz 100mA - - Surface Mount S-Mini 125°C (Max)
TBAT54,LM

TBAT54,LM

DIODE SCHOTTKY 30V 140MA SOT23-3

Toshiba Semiconductor and Storage

5,901 -
TBAT54,LM

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 30 V 580 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 1.5 ns 2 µA @ 25 V - 140mA - - Surface Mount SOT-23-3 150°C (Max)
CTS521,L3F

CTS521,L3F

DIODE SCHOTTKY 30V 200MA CST2

Toshiba Semiconductor and Storage

158,133 -
CTS521,L3F

数据表

- SOD-882 Tape & Reel (TR) Active Schottky 30 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 30 µA @ 30 V 25pF @ 0V, 1MHz 200mA - - Surface Mount CST2 125°C (Max)
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