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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1SS385,LF(CT

1SS385,LF(CT

DIODE SCHOTTKY 10V 100MA SSM

Toshiba Semiconductor and Storage

4,975 -
1SS385,LF(CT

数据表

- SC-75, SOT-416 Tape & Reel (TR) Active Schottky 10 V 500 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed - 20 µA @ 10 V 20pF @ 0V, 1MHz 100mA - - Surface Mount SSM 125°C (Max)
CUHS15S40,H3F

CUHS15S40,H3F

DIODE SCHOTTKY 40V 1.5A US2H

Toshiba Semiconductor and Storage

5,711 -
CUHS15S40,H3F

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 40 V 510 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V 170pF @ 0V, 1MHz 1.5A - - Surface Mount US2H 150°C (Max)
CMS08(TE12L,Q,M)

CMS08(TE12L,Q,M)

DIODE SCHOTTKY 30V 1A M-FLAT

Toshiba Semiconductor and Storage

2,181 -
CMS08(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 30 V 370 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V 70pF @ 10V, 1MHz 1A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 125°C
1SS193S,LF(D

1SS193S,LF(D

DIODE GEN PURP 80V 100MA S-MINI

Toshiba Semiconductor and Storage

5,886 -
1SS193S,LF(D

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 80 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 500 nA @ 80 V 3pF @ 0V, 1MHz 100mA - - Surface Mount S-Mini 125°C (Max)
CLH01(TE16L,Q)

CLH01(TE16L,Q)

DIODE GEN PURP 200V 3A L-FLAT

Toshiba Semiconductor and Storage

7,568 -
CLH01(TE16L,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 200 V 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 3A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH03(TE16L,Q)

CLH03(TE16L,Q)

DIODE GEN PURP 400V 3A L-FLAT

Toshiba Semiconductor and Storage

7,801 -
CLH03(TE16L,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 400 V - Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - 3A - - Surface Mount L-FLAT™ (4x5.5) -
CLH05(T6L,NKOD,Q)

CLH05(T6L,NKOD,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

6,300 -
CLH05(T6L,NKOD,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 200 V 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 5A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH05(TE16R,Q)

CLH05(TE16R,Q)

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

6,098 -
CLH05(TE16R,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 200 V 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 5A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH05,LMBJQ(O

CLH05,LMBJQ(O

DIODE GEN PURP 200V 5A L-FLAT

Toshiba Semiconductor and Storage

9,589 -
CLH05,LMBJQ(O

数据表

- L-FLAT™ Bulk Obsolete Standard 200 V 980 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 5A - - Surface Mount L-FLAT™ (4x5.5) -40°C ~ 150°C
CLH06(TE16L,Q)

CLH06(TE16L,Q)

DIODE GEN PURP 300V 5A L-FLAT

Toshiba Semiconductor and Storage

3,653 -
CLH06(TE16L,Q)

数据表

- L-FLAT™ Bulk Obsolete Standard 300 V - Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - 5A - - Surface Mount L-FLAT™ (4x5.5) -
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