| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1SS385,LF(CTDIODE SCHOTTKY 10V 100MA SSM Toshiba Semiconductor and Storage |
4,975 | - |
|
数据表 |
- | SC-75, SOT-416 | Tape & Reel (TR) | Active | Schottky | 10 V | 500 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 20 µA @ 10 V | 20pF @ 0V, 1MHz | 100mA | - | - | Surface Mount | SSM | 125°C (Max) |
|
CUHS15S40,H3FDIODE SCHOTTKY 40V 1.5A US2H Toshiba Semiconductor and Storage |
5,711 | - |
|
数据表 |
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Active | Schottky | 40 V | 510 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 170pF @ 0V, 1MHz | 1.5A | - | - | Surface Mount | US2H | 150°C (Max) |
|
CMS08(TE12L,Q,M)DIODE SCHOTTKY 30V 1A M-FLAT Toshiba Semiconductor and Storage |
2,181 | - |
|
数据表 |
- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 30 V | 370 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 30 V | 70pF @ 10V, 1MHz | 1A | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
|
1SS193S,LF(DDIODE GEN PURP 80V 100MA S-MINI Toshiba Semiconductor and Storage |
5,886 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Standard | 80 V | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 3pF @ 0V, 1MHz | 100mA | - | - | Surface Mount | S-Mini | 125°C (Max) |
|
CLH01(TE16L,Q)DIODE GEN PURP 200V 3A L-FLAT Toshiba Semiconductor and Storage |
7,568 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 980 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | 3A | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH03(TE16L,Q)DIODE GEN PURP 400V 3A L-FLAT Toshiba Semiconductor and Storage |
7,801 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 400 V | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | 3A | - | - | Surface Mount | L-FLAT™ (4x5.5) | - |
|
CLH05(T6L,NKOD,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
6,300 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | 5A | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH05(TE16R,Q)DIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
6,098 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | 5A | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH05,LMBJQ(ODIODE GEN PURP 200V 5A L-FLAT Toshiba Semiconductor and Storage |
9,589 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 200 V | 980 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | - | 5A | - | - | Surface Mount | L-FLAT™ (4x5.5) | -40°C ~ 150°C |
|
CLH06(TE16L,Q)DIODE GEN PURP 300V 5A L-FLAT Toshiba Semiconductor and Storage |
3,653 | - |
|
数据表 |
- | L-FLAT™ | Bulk | Obsolete | Standard | 300 V | - | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | - | - | 5A | - | - | Surface Mount | L-FLAT™ (4x5.5) | - |