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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CUS15S40,H3F

CUS15S40,H3F

DIODE SCHOTTKY 40V 1.5A USC

Toshiba Semiconductor and Storage

9,731 -
CUS15S40,H3F

数据表

- SC-76, SOD-323 Tape & Reel (TR) Active Schottky 40 V 450 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V 170pF @ 0V, 1MHz 1.5A - - Surface Mount USC 125°C (Max)
CMF01A,LQ(M

CMF01A,LQ(M

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

8,824 -
CMF01A,LQ(M

数据表

- SOD-128 Box Active Standard 600 V 2 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 2A - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMF02A,LQ(M

CMF02A,LQ(M

DIODE GEN PURP 600V 1A M-FLAT

Toshiba Semiconductor and Storage

5,586 -
CMF02A,LQ(M

数据表

- SOD-128 Box Active Standard 600 V 2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 1A - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMG03A,LQ(M

CMG03A,LQ(M

DIODE GEN PURP 600V 2A M-FLAT

Toshiba Semiconductor and Storage

7,459 -
CMG03A,LQ(M

数据表

- SOD-128 Box Active Standard 600 V 1.1 V @ 2 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 2A - - Surface Mount M-FLAT (2.4x3.8) 150°C
CMG06A,LQ(M

CMG06A,LQ(M

DIODE GEN PURP 600V 1A M-FLAT

Toshiba Semiconductor and Storage

2,536 -
CMG06A,LQ(M

数据表

- SOD-128 Box Active Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 1A - - Surface Mount M-FLAT (2.4x3.8) 150°C
CRF03A,LQ(M

CRF03A,LQ(M

DIODE GEN PURP 600V 700MA S-FLAT

Toshiba Semiconductor and Storage

4,302 -
CRF03A,LQ(M

数据表

- SOD-123F Box Active Standard 600 V 2 V @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 700mA - - Surface Mount S-FLAT (1.6x3.5) 150°C
CRG04A,LQ(M

CRG04A,LQ(M

DIODE GEN PURP 600V 1A S-FLAT

Toshiba Semiconductor and Storage

3,904 -
CRG04A,LQ(M

数据表

- SOD-123F Box Active Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 1A - - Surface Mount S-FLAT (1.6x3.5) 150°C
CRS10I30A(TE85L,QM

CRS10I30A(TE85L,QM

DIODE SCHOTTKY 30V 1A S-FLAT

Toshiba Semiconductor and Storage

6,529 -
CRS10I30A(TE85L,QM

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 390 mV @ 700 mA Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 30 V 50pF @ 10V, 1MHz 1A - - Surface Mount S-FLAT (1.6x3.5) 150°C
CRS01(TE85L,Q,M)

CRS01(TE85L,Q,M)

DIODE SCHOTTKY 30V 1A S-FLAT

Toshiba Semiconductor and Storage

66,668 -
CRS01(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 360 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 30 V 40pF @ 10V, 1MHz 1A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 125°C
CRS06(TE85L,Q,M)

CRS06(TE85L,Q,M)

DIODE SCHOTTKY 20V 1A S-FLAT

Toshiba Semiconductor and Storage

4,733 -
CRS06(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 20 V 360 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 20 V 60pF @ 10V, 1MHz 1A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 125°C
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