| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CUS15S40,H3FDIODE SCHOTTKY 40V 1.5A USC Toshiba Semiconductor and Storage |
9,731 | - |
|
数据表 |
- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Schottky | 40 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 170pF @ 0V, 1MHz | 1.5A | - | - | Surface Mount | USC | 125°C (Max) |
|
CMF01A,LQ(MDIODE GEN PURP 600V 2A M-FLAT Toshiba Semiconductor and Storage |
8,824 | - |
|
数据表 |
- | SOD-128 | Box | Active | Standard | 600 V | 2 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | 2A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C |
|
CMF02A,LQ(MDIODE GEN PURP 600V 1A M-FLAT Toshiba Semiconductor and Storage |
5,586 | - |
|
数据表 |
- | SOD-128 | Box | Active | Standard | 600 V | 2 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | 1A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C |
|
CMG03A,LQ(MDIODE GEN PURP 600V 2A M-FLAT Toshiba Semiconductor and Storage |
7,459 | - |
|
数据表 |
- | SOD-128 | Box | Active | Standard | 600 V | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | - | 2A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C |
|
CMG06A,LQ(MDIODE GEN PURP 600V 1A M-FLAT Toshiba Semiconductor and Storage |
2,536 | - |
|
数据表 |
- | SOD-128 | Box | Active | Standard | 600 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | - | 1A | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C |
|
CRF03A,LQ(MDIODE GEN PURP 600V 700MA S-FLAT Toshiba Semiconductor and Storage |
4,302 | - |
|
数据表 |
- | SOD-123F | Box | Active | Standard | 600 V | 2 V @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 600 V | - | 700mA | - | - | Surface Mount | S-FLAT (1.6x3.5) | 150°C |
|
CRG04A,LQ(MDIODE GEN PURP 600V 1A S-FLAT Toshiba Semiconductor and Storage |
3,904 | - |
|
数据表 |
- | SOD-123F | Box | Active | Standard | 600 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | - | 1A | - | - | Surface Mount | S-FLAT (1.6x3.5) | 150°C |
|
CRS10I30A(TE85L,QMDIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage |
6,529 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 30 V | 390 mV @ 700 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 30 V | 50pF @ 10V, 1MHz | 1A | - | - | Surface Mount | S-FLAT (1.6x3.5) | 150°C |
|
CRS01(TE85L,Q,M)DIODE SCHOTTKY 30V 1A S-FLAT Toshiba Semiconductor and Storage |
66,668 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 30 V | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.5 mA @ 30 V | 40pF @ 10V, 1MHz | 1A | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 125°C |
|
CRS06(TE85L,Q,M)DIODE SCHOTTKY 20V 1A S-FLAT Toshiba Semiconductor and Storage |
4,733 | - |
|
数据表 |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 20 V | 360 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | 60pF @ 10V, 1MHz | 1A | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 125°C |