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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CLS10F40,L3F

CLS10F40,L3F

DIODE SCHOTTKY 40V 1A CL2E

Toshiba Semiconductor and Storage

93,464 -
CLS10F40,L3F

数据表

- 0402 (1006 Metric) Tape & Reel (TR) Active Schottky 40 V 570 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 25 µA @ 40 V 130pF @ 0V, 1MHz 1A - - Surface Mount CL2E 150°C
CMS06(TE12L,Q,M)

CMS06(TE12L,Q,M)

DIODE SCHOTTKY 30V 2A M-FLAT

Toshiba Semiconductor and Storage

31,435 -
CMS06(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Schottky 30 V 370 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 30 V 130pF @ 10V, 1MHz 2A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 125°C
CRS09(TE85L,Q,M)

CRS09(TE85L,Q,M)

DIODE SCHOTTKY 30V 1.5A S-FLAT

Toshiba Semiconductor and Storage

105,052 -
CRS09(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 460 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 90pF @ 10V, 1MHz 1.5A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M)

DIODE GEN PURP 200V 1A S-FLAT

Toshiba Semiconductor and Storage

77,624 -
CRH01(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Active Standard 200 V 980 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 1A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CUHS20F40,H3F

CUHS20F40,H3F

DIODE SCHOTTKY 40V 2A US2H

Toshiba Semiconductor and Storage

24,894 -
CUHS20F40,H3F

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 40 V 540 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 60 µA @ 40 V 300pF @ 0V, 1MHz 2A - - Surface Mount US2H 150°C (Max)
CUHS20S40,H3F

CUHS20S40,H3F

DIODE SCHOTTKY 40V 2A US2H

Toshiba Semiconductor and Storage

25,827 -
CUHS20S40,H3F

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Schottky 40 V 470 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 40 V 290pF @ 0V, 1MHz 2A - - Surface Mount US2H 150°C (Max)
CMH04(TE12L,Q,M)

CMH04(TE12L,Q,M)

DIODE GEN PURP 200V 1A M-FLAT

Toshiba Semiconductor and Storage

1,378 -
CMH04(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Active Standard 200 V 980 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 1A - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CRS10I40A(TE85L,QM

CRS10I40A(TE85L,QM

DIODE GEN PURP 40V 1A S-FLAT

Toshiba Semiconductor and Storage

2,684 -
CRS10I40A(TE85L,QM

数据表

- SOD-123F Tape & Reel (TR) Active Standard 40 V 490 mV @ 700 mA Standard Recovery >500ns, > 200mA (Io) - 60 µA @ 40 V 35pF @ 10V, 1MHz 1A - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
CRS15(TE85L,Q,M)

CRS15(TE85L,Q,M)

DIODE SCHOTTKY 30V 3A S-FLAT

Toshiba Semiconductor and Storage

5,851 -
CRS15(TE85L,Q,M)

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 520 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 90pF @ 10V, 1MHz 3A - - Surface Mount S-FLAT (1.6x3.5) -40°C ~ 150°C
CRS10I30C(TE85L,QM

CRS10I30C(TE85L,QM

DIODE SCHOTTKY 30V 1A S-FLAT

Toshiba Semiconductor and Storage

6,244 -
CRS10I30C(TE85L,QM

数据表

- SOD-123F Tape & Reel (TR) Active Schottky 30 V 360 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 82pF @ 10V, 1MHz 1A - - Surface Mount S-FLAT (1.6x3.5) 150°C (Max)
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