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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR309 A0GDIODE SCHOTTKY 90V 3A DO201AD Taiwan Semiconductor Corporation |
7,342 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Schottky | 90 V | 850 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 90 V | - | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
SR320HA0GDIODE SCHOTTKY 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,596 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Schottky | 200 V | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 200 V | - | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
SR510HA0GDIODE SCHOTTKY 100V 5A DO201AD Taiwan Semiconductor Corporation |
9,954 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Schottky | 100 V | 850 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | 5A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
SR810HA0GDIODE SCHOTTKY 100V 8A DO201AD Taiwan Semiconductor Corporation |
4,982 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Schottky | 100 V | 920 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | 8A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
SRT12HA0GDIODE SCHOTTKY 20V 1A TS-1 Taiwan Semiconductor Corporation |
9,050 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Schottky | 20 V | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | 1A | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 125°C |
|
|
SRT13HA0GDIODE SCHOTTKY 30V 1A TS-1 Taiwan Semiconductor Corporation |
4,303 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Schottky | 30 V | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | - | 1A | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 125°C |
|
|
UG06BHA0GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
8,366 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 100 V | 950 mV @ 600 mA | Fast Recovery =< 500ns, > 200mA (Io) | 15 ns | 5 µA @ 100 V | 9pF @ 4V, 1MHz | 600mA | Automotive | AEC-Q101 | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
UG54G A0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
2,923 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1.05 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 200 V | - | 5A | - | - | Through Hole | DO-201AD | -55°C ~ 175°C |
|
|
UG54GHA0GDIODE GEN PURP 200V 5A DO201AD Taiwan Semiconductor Corporation |
3,516 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1.05 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 10 µA @ 200 V | - | 5A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 175°C |
|
|
UG58GHA0GDIODE GEN PURP 600V 5A DO201AD Taiwan Semiconductor Corporation |
6,814 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 600 V | 2.1 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 30 µA @ 600 V | - | 5A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
