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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
HERA804G C0G

HERA804G C0G

DIODE GEN PURP 300V 8A TO220AC

Taiwan Semiconductor Corporation

4,162 -
HERA804G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 300 V 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 65pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERA805G C0G

HERA805G C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

4,557 -
HERA805G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 65pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERA806G C0G

HERA806G C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

8,301 -
HERA806G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 55pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERA807G C0G

HERA807G C0G

DIODE GEN PURP 800V 8A TO220AC

Taiwan Semiconductor Corporation

9,835 -
HERA807G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 800 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 55pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERAF1003G C0G

HERAF1003G C0G

DIODE GEN PURP 200V 10A ITO220AC

Taiwan Semiconductor Corporation

6,274 -
HERAF1003G C0G

数据表

- TO-220-2 Full Pack Tube Active Standard 200 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1004G C0G

HERAF1004G C0G

DIODE GEN PURP 300V 10A ITO220AC

Taiwan Semiconductor Corporation

7,864 -
HERAF1004G C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 300 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1005G C0G

HERAF1005G C0G

DIODE GEN PURP 400V 10A ITO220AC

Taiwan Semiconductor Corporation

2,500 -
HERAF1005G C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 400 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1006G C0G

HERAF1006G C0G

DIODE GEN PURP 600V 10A ITO220AC

Taiwan Semiconductor Corporation

2,910 -
HERAF1006G C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 600 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V 60pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1007G C0G

HERAF1007G C0G

DIODE GEN PURP 800V 10A ITO220AC

Taiwan Semiconductor Corporation

5,047 -
HERAF1007G C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 800 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 800 V 60pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1008G C0G

HERAF1008G C0G

DIODE GEN PURP 10A ITO220AC

Taiwan Semiconductor Corporation

6,508 -
HERAF1008G C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 1000 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 1000 V 60pF @ 4V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 150°C
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