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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
HER303G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
3,124 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
HER603G A0GDIODE GEN PURP 200V 6A R-6 Taiwan Semiconductor Corporation |
2,915 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 200 V | 80pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
HT18G A0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,203 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1.7 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
MUR160HA0GDIODE GEN PURP 600V 1A DO204AC Taiwan Semiconductor Corporation |
5,269 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1.25 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | 27pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 175°C |
|
|
P2500M A0GDIODE GEN PURP 25A DO201AD Taiwan Semiconductor Corporation |
6,739 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 870 mV @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | - | 25A | - | - | Through Hole | DO-201AD | -50°C ~ 175°C |
|
|
P2500MHA0GDIODE GEN PURP 25A DO201AD Taiwan Semiconductor Corporation |
7,886 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 870 mV @ 5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | - | 25A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -50°C ~ 175°C |
|
|
SF2L6GHA0GDIODE GEN PURP 400V 2A DO204AC Taiwan Semiconductor Corporation |
9,215 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 1 µA @ 400 V | 20pF @ 4V, 1MHz | 2A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
SF33G A0GDIODE GEN PURP 150V 3A DO201AD Taiwan Semiconductor Corporation |
4,416 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 150 V | 950 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 80pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
SF61GHA0GDIODE GEN PURP 50V 6A DO201AD Taiwan Semiconductor Corporation |
8,438 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 50 V | 975 mV @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 50 V | 100pF @ 4V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
SF67GHA0GDIODE GEN PURP 500V 6A DO201AD Taiwan Semiconductor Corporation |
2,939 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 500 V | 1.7 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 500 V | 50pF @ 4V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
