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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6A60G A0GDIODE GEN PURP 600V 6A R-6 Taiwan Semiconductor Corporation |
8,673 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 60pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A80G A0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,113 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A80GHA0GDIODE GEN PURP 800V 6A R-6 Taiwan Semiconductor Corporation |
3,548 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | 60pF @ 4V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
|
FR152G A0GDIODE GEN PURP 100V 1.5A DO204AC Taiwan Semiconductor Corporation |
6,403 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1.3 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 100 V | 20pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
FR205G A0GDIODE GEN PURP 600V 2A DO204AC Taiwan Semiconductor Corporation |
3,370 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
FR207G A0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,642 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1.3 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
HER153G A0GDIODE GEN PURP 200V 1.5A DO204AC Taiwan Semiconductor Corporation |
6,100 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1 V @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 200 V | 35pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
PUUP12J25NS, 12A, 600V, ULTRA FAST RECO Taiwan Semiconductor Corporation |
7,030 | - |
|
数据表 |
- | TO-277, 3-PowerDFN | Tape & Reel (TR) | Active | Standard | 600 V | 2.1 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 26 ns | 5 µA @ 600 V | 92pF @ 4V, 1MHz | 12A | - | - | Surface Mount | TO-277A (SMPC) | -55°C ~ 150°C |
|
|
HER202G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
9,574 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 100 V | 35pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
HER301G A0GDIODE GEN PURP 50V 3A DO201AD Taiwan Semiconductor Corporation |
3,569 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 50 V | 1 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 10 µA @ 50 V | 60pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
