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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1T7G A0GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
5,506 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
2A02G A0GDIODE GEN PURP 100V 2A DO204AC Taiwan Semiconductor Corporation |
4,489 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1.1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 15pF @ 4V, 1MHz | 2A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
2A07GHA0GDIODE GEN PURP 2A DO204AC Taiwan Semiconductor Corporation |
3,929 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1 V @ 2 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 2A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
3A100HA0GDIODE GEN PURP 3A DO204AC Taiwan Semiconductor Corporation |
4,176 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 27pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
3A60HA0GDIODE GEN PURP 600V 3A DO204AC Taiwan Semiconductor Corporation |
7,092 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 27pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
6A100G A0GDIODE GEN PURP 1KV 6A R-6 Taiwan Semiconductor Corporation |
4,936 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1000 V | 60pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A10G A0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
9,402 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 60pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A10GHA0GDIODE GEN PURP 100V 6A R-6 Taiwan Semiconductor Corporation |
6,202 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 100 V | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | 60pF @ 4V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A40G A0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
8,804 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 60pF @ 4V, 1MHz | 6A | - | - | Through Hole | R-6 | -55°C ~ 150°C |
|
|
6A40GHA0GDIODE GEN PURP 400V 6A R-6 Taiwan Semiconductor Corporation |
7,417 | - |
|
数据表 |
- | R-6, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | 60pF @ 4V, 1MHz | 6A | Automotive | AEC-Q101 | Through Hole | R-6 | -55°C ~ 150°C |
