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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GPA804 C0G

GPA804 C0G

DIODE GEN PURP 400V 8A TO220AC

Taiwan Semiconductor Corporation

5,520 -
GPA804 C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 400 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
GPA805 C0G

GPA805 C0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

5,160 -
GPA805 C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 600 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
GPA805HC0G

GPA805HC0G

DIODE GEN PURP 600V 8A TO220AC

Taiwan Semiconductor Corporation

7,238 -
GPA805HC0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 600 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V 50pF @ 4V, 1MHz 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA806 C0G

GPA806 C0G

DIODE GEN PURP 800V 8A TO220AC

Taiwan Semiconductor Corporation

2,712 -
GPA806 C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 800 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
GPA806HC0G

GPA806HC0G

DIODE GEN PURP 800V 8A TO220AC

Taiwan Semiconductor Corporation

5,848 -
GPA806HC0G

数据表

- TO-220-2 Tube Active Standard 800 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 800 V 50pF @ 4V, 1MHz 8A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GPA807 C0G

GPA807 C0G

DIODE GEN PURP 8A TO220AC

Taiwan Semiconductor Corporation

3,102 -
GPA807 C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 1000 V 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERA801G C0G

HERA801G C0G

DIODE GEN PURP 50V 8A TO220AC

Taiwan Semiconductor Corporation

3,967 -
HERA801G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 50 V 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 65pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
SF26G A0G

SF26G A0G

DIODE GEN PURP 400V 2A DO204AC

Taiwan Semiconductor Corporation

96 -
SF26G A0G

数据表

- DO-204AC, DO-15, Axial Cut Tape (CT) Active Standard 400 V 1.3 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 400 V 20pF @ 4V, 1MHz 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
HERA802G C0G

HERA802G C0G

DIODE GEN PURP 100V 8A TO220AC

Taiwan Semiconductor Corporation

8,530 -
HERA802G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 100 V 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 65pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
HERA803G C0G

HERA803G C0G

DIODE GEN PURP 200V 8A TO220AC

Taiwan Semiconductor Corporation

4,750 -
HERA803G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 200 V 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 65pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 150°C
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