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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UG06B A1GDIODE GEN PURP 100V 600MA TS-1 Taiwan Semiconductor Corporation |
9,552 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 100 V | 950 mV @ 600 mA | Fast Recovery =< 500ns, > 200mA (Io) | 15 ns | 5 µA @ 100 V | 9pF @ 4V, 1MHz | 600mA | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
1N5398G A0GDIODE GEN PURP 800V 1.5A DO204AC Taiwan Semiconductor Corporation |
8,209 | - |
|
数据表 |
- | DO-204AC, DO-15, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1 V @ 1.5 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 1.5A | - | - | Through Hole | DO-204AC (DO-15) | -55°C ~ 150°C |
|
1N5401GHA0GDIODE GEN PURP 100V 3A DO201AD Taiwan Semiconductor Corporation |
2,389 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 100 V | 1.1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 100 V | 25pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5402G A0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
9,320 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 25pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5402GHA0GDIODE GEN PURP 200V 3A DO201AD Taiwan Semiconductor Corporation |
5,431 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 200 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 200 V | 25pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5406GHA0GDIODE GEN PURP 600V 3A DO201AD Taiwan Semiconductor Corporation |
5,199 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 25pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5407GHA0GDIODE GEN PURP 800V 3A DO201AD Taiwan Semiconductor Corporation |
7,699 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 800 V | 1 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 800 V | 25pF @ 4V, 1MHz | 3A | Automotive | AEC-Q101 | Through Hole | DO-201AD | -55°C ~ 150°C |
|
|
1N5822 A0GDIODE SCHOTTKY 40V 3A DO201AD Taiwan Semiconductor Corporation |
4,902 | - |
|
数据表 |
- | DO-201AD, Axial | Tape & Box (TB) | Active | Schottky | 40 V | 525 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 40 V | 200pF @ 4V, 1MHz | 3A | - | - | Through Hole | DO-201AD | -55°C ~ 125°C |
|
|
1T4G A0GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
7,410 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
1T5G A0GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
4,347 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
