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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5550/TRSTD RECTIFIER Microchip Technology |
5,781 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5550E3DIODE GEN PURP 200V 3A B AXIAL Microchip Technology |
4,869 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5550/TRDIODE GEN PURP 200V 3A Microchip Technology |
2,144 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N5551/TRDIODE GEN PURP 400V 3A Microchip Technology |
5,482 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
CD1A100DIODE SCHOTTKY 100V 1A DIE Microchip Technology |
8,799 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 100 V | 750 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 100 V | - | 1A | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
|
1N5712-1E3DIODE SCHOTTKY 20V 75MA DO35 Microchip Technology |
7,283 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 1 V @ 35 mA | Small Signal =< 200mA (Io), Any Speed | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | 75mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
1N5803E3/TRDIODE GEN PURP REV 80V 1A AXIAL Microchip Technology |
8,020 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 80 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | Axial | -65°C ~ 175°C |
|
|
JAN1N3957DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
8,251 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 300 V | - | 1A | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
7,193 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N4946DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
9,216 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | 25pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
