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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3957DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
6,529 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 1000 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N6642US/TRDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
3,896 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 40pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
1N5817E3DIODE SCHOTTKY 20V 1A DO41 Microchip Technology |
5,891 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 20 V | 450 mV @ 1 A | No Recovery Time > 500mA (Io) | - | 1 mA @ 20 V | - | 1A | - | - | Through Hole | DO-41 | -55°C ~ 150°C |
|
1N5552E3/TRSTD RECTIFIER Microchip Technology |
7,769 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 5A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JAN1N6642U/TRDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
3,174 | - |
|
数据表 |
- | SQ-MELF, D | Tape & Reel (TR) | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | - | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
1N5817/TRDIODE SCHOTTKY 20V 1A DO41 Microchip Technology |
6,563 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Schottky | 20 V | 450 mV @ 1 A | No Recovery Time > 500mA (Io) | - | 1 mA @ 20 V | - | 1A | - | - | Through Hole | DO-41 | -55°C ~ 150°C |
|
|
1N5817G/TRDIODE SCHOTTKY 20V 1A DO41 Microchip Technology |
5,291 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Reel (TR) | Active | Schottky | 20 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | - | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
|
1N5806E3/TRDIODE GEN PURP 150V 2.5A A AXIAL Microchip Technology |
5,558 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 2.5A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5622/TRDIODE GEN PURP 1KV 1A Microchip Technology |
7,870 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
1N5622USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
4,678 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | 1A | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
