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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N6642USDIODE GEN PURP 75V 300MA D-5D Microchip Technology |
7,444 | - |
|
数据表 |
- | SQ-MELF, D | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 5 ns | 500 nA @ 75 V | 40pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Surface Mount | D-5D | -65°C ~ 175°C |
|
|
1N5552/TRDIODE GEN PURP 600V 3A B AXIAL Microchip Technology |
2,938 | - |
|
数据表 |
- | B, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5805DIODE GEN PURP 125V 1A AXIAL Microchip Technology |
6,361 | - |
|
数据表 |
- | A, Axial | Bulk | Discontinued at Digi-Key | Standard | 125 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 125°C |
|
|
APT100D60BGDIODE GEN PURP 600V 100A TO247 Microchip Technology |
3,867 | - |
|
数据表 |
- | TO-247-2 | Bulk | Active | Standard | 600 V | 2 V @ 100 A | Standard Recovery >500ns, > 200mA (Io) | - | 250 µA @ 600 V | - | 100A | - | - | Through Hole | TO-247 | -55°C ~ 150°C |
|
1N5551DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
6,230 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5711-1/TRDIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
6,050 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 70 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
1N5803E3DIODE GEN PURP 80V 1A AXIAL Microchip Technology |
9,564 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 80 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | Axial | -65°C ~ 175°C |
|
1N5622/TRDIODE GEN PURP 1KV 1A Microchip Technology |
3,669 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
CDLL1A80DIODE SCHOTTKY 80V 1A DO213AB Microchip Technology |
5,320 | - |
|
数据表 |
- | DO-213AB, MELF | Bulk | Active | Schottky | 80 V | 690 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 80 V | - | 1A | - | - | Surface Mount | DO-213AB | - |
|
JANTX1N5620/TRDIODE GEN PURP 800V 1A Microchip Technology |
8,837 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
