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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N5418DIODE GEN PURP 400V 3A AXIAL Microchip Technology |
9,347 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 400 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 400 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
JAN1N5711-1DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology |
5,761 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 70 V | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | - | 200 nA @ 70 V | 2pF @ 0V, 1MHz | 33mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
|
1N5552E3DIODE GEN PURP 600V 5A B AXIAL Microchip Technology |
2,652 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | - | - | 5A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N58175A SCHOTTKY RECTIFIER Microchip Technology |
9,976 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
1N5614US/TRDIODE GEN PURP 200V 1A D-5A Microchip Technology |
7,927 | - |
|
数据表 |
- | SQ-MELF, A | Tape & Reel (TR) | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | - | - | Surface Mount | D-5A | -65°C ~ 200°C |
|
1N5818DIODE SCHOTTKY 30V 1A DO41 Microchip Technology |
7,704 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 30 V | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 30 V | - | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1N5817GDIODE SCHOTTKY 20V 1A DO41 Microchip Technology |
4,743 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Bulk | Active | Schottky | 20 V | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1 mA @ 20 V | - | 1A | - | - | Through Hole | DO-204AL (DO-41) | -65°C ~ 150°C |
|
JANTX1N3612/TRDIODE GEN PURP 400V 1A Microchip Technology |
6,600 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | - | 1A | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JAN1N4247/TRDIODE GEN PURP 600V 1A Microchip Technology |
2,020 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5622DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
5,427 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 1000 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
