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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JAN1N4946DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2,026 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 600 V | - | 1A | Military | MIL-PRF-19500/360 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N6643DIODE GEN PURPOSE Microchip Technology |
2,257 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 50 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 6 ns | 500 nA @ 50 V | 5pF @ 0V, 1MHz | 300mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JAN1N5621/TRDIODE GEN PURP 800V 1A Microchip Technology |
3,206 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JAN1N3612DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
8,804 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 400 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 µA @ 300 V | - | 1A | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N5614DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
8,285 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 200 V | - | 1A | Military | MIL-PRF-19500/427 | Through Hole | A, Axial | -65°C ~ 200°C |
|
1N5419/TRDIODE GEN PURP 500V 3A B SQ-MELF Microchip Technology |
5,014 | - |
|
数据表 |
- | SQ-MELF, B | Tape & Reel (TR) | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 1 µA @ 500 V | - | 3A | - | - | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |
|
1N5803/TRDIODE GEN PURP 75V 1A Microchip Technology |
9,496 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 75 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 75 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JAN1N4249/TRDIODE GEN PURP 1KV 1A Microchip Technology |
3,399 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 1000 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 1 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N5805/TRDIODE GEN PURP 125V 1A Microchip Technology |
2,507 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 125 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 125 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 125°C |
|
|
1N5804/TRDIODE GEN PURP 100V 1A Microchip Technology |
8,341 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
