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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UFS180JE3/TR13

UFS180JE3/TR13

DIODE GEN PURP 800V 1A DO214BA

Microchip Technology

1,544 -
UFS180JE3/TR13

数据表

- DO-214BA Tape & Reel (TR) Active Standard 800 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 20 µA @ 800 V - 1A - - Surface Mount DO-214BA -55°C ~ 175°C
JANTX1N4150-1

JANTX1N4150-1

DIODE GEN PURP 50V 200MA DO35

Microchip Technology

450 -
JANTX1N4150-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 50 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - 200mA Military MIL-PRF-19500/231 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
UPR20E3/TR7

UPR20E3/TR7

DIODE GEN PURP 200V 2A POWERMITE

Microchip Technology

2,494 -
UPR20E3/TR7

数据表

- DO-216AA Tape & Reel (TR) Active Standard 200 V 1.25 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V - 2A - - Surface Mount Powermite -55°C ~ 150°C
JAN1N4148UR-1

JAN1N4148UR-1

DIODE GP 100V 200MA DO213AA

Microchip Technology

907 -
JAN1N4148UR-1

数据表

- DO-213AA Bulk Active Standard 100 V 800 mV @ 10 mA Small Signal =< 200mA (Io), Any Speed 20 ns 25 nA @ 20 V 2.8pF @ 1.5V, 1MHz 200mA Military MIL-PRF-19500/241 Surface Mount DO-213AA -65°C ~ 175°C
1N4150UR-1

1N4150UR-1

DIODE GEN PURP 50V 200MA DO213AA

Microchip Technology

1,319 -
1N4150UR-1

数据表

- DO-213AA Bulk Active Standard 50 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - 200mA - - Surface Mount DO-213AA -65°C ~ 175°C
JANTXV1N4148-1

JANTXV1N4148-1

DIODE GEN PURP 75V 200MA DO35

Microchip Technology

2,011 -
JANTXV1N4148-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 75 V 1.2 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 20 ns 500 nA @ 75 V - 200mA Military MIL-PRF-19500/116 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
APT30DQ60BG

APT30DQ60BG

DIODE GP 600V 30A TO247

Microchip Technology

439 -
APT30DQ60BG

数据表

- TO-247-2 Tube Active Standard 600 V 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 25 µA @ 600 V - 30A - - Through Hole TO-247 [B] -55°C ~ 175°C
5822SMJE3/TR13

5822SMJE3/TR13

DIODE SCHOTTKY 40V 3A SMCJ

Microchip Technology

7,821 -
5822SMJE3/TR13

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 40 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 1.5 mA @ 40 V - 3A - - Surface Mount DO-214AB (SMCJ) -55°C ~ 150°C
APT30DQ120BG

APT30DQ120BG

DIODE GP 1.2KV 30A TO247

Microchip Technology

349 -
APT30DQ120BG

数据表

- TO-247-2 Tube Active Standard 1200 V 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 320 ns 100 µA @ 1200 V - 30A - - Through Hole TO-247 [B] -55°C ~ 175°C
APT40DQ60BG

APT40DQ60BG

DIODE GP 600V 40A TO247

Microchip Technology

3,027 -
APT40DQ60BG

数据表

- TO-247-2 Tube Active Standard 600 V 2.4 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 25 µA @ 600 V - 40A - - Through Hole TO-247 [B] -55°C ~ 175°C
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