Microchip Technology|单个二极管 - 页 496

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	267	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	600 V	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	1A	-	-	Through Hole	A, Axial	-65°C ~ 200°C
JAN1N5617 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	177	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	400 V	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 nA @ 400 V	-	1A	Military	MIL-PRF-19500/429	Through Hole	A, Axial	-65°C ~ 175°C
1N5620 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	300	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	800 V	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	1A	-	-	Through Hole	A, Axial	-65°C ~ 200°C
1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	341	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	200 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	-	1A	-	-	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N3611 DIODE GEN PURP 200V 1A AXIAL Microchip Technology	356	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	200 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 200 V	-	1A	Military	MIL-PRF-19500/228	Through Hole	A, Axial	-65°C ~ 175°C
JANTX1N5806 DIODE GEN PURP 150V 1A AXIAL Microchip Technology	149	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	150 V	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	1A	Military	MIL-PRF-19500/477	Through Hole	A, Axial	-65°C ~ 175°C
1N5804 DIODE GEN PURP 100V 1A AXIAL Microchip Technology	299	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	100 V	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 10V, 1MHz	1A	-	-	Through Hole	A, Axial	-65°C ~ 175°C
APT60S20SG DIODE SCHOTTKY 200V 75A D3 Microchip Technology	187	-	询价单	数据表	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Schottky	200 V	900 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	1 mA @ 200 V	-	75A	-	-	Surface Mount	D3PAK	-55°C ~ 150°C
APT8DQ60KG DIODE GEN PURP 600V 8A TO220 Microchip Technology	3,603	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	600 V	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	19 ns	25 µA @ 600 V	-	8A	-	-	Through Hole	TO-220 [K]	-55°C ~ 175°C
1N5614US DIODE GEN PURP 200V 1A D-5A Microchip Technology	250	-	询价单	数据表	-	SQ-MELF, A	Bulk	Active	Standard	200 V	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 200 V	-	1A	-	-	Surface Mount	D-5A	-65°C ~ 200°C

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