| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5550DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
262 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 200 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5802DIODE GEN PURP 50V 1A AXIAL Microchip Technology |
298 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 50 V | 25pF @ 10V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5807DIODE GEN PURP 50V 3A AXIAL Microchip Technology |
198 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 50 V | 875 mV @ 4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 5 µA @ 50 V | 60pF @ 10V, 1MHz | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
JANTX1N5417DIODE GEN PURP 200V 3A AXIAL Microchip Technology |
204 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | Military | MIL-PRF-19500/411 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N5615USDIODE GEN PURP 200V 1A D-5A Microchip Technology |
630 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 200 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 200 V | 45pF @ 12V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTX1N6642DIODE GEN PURP 75V 300MA DO35 Microchip Technology |
6,996 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 500 nA @ 75 V | 5pF @ 0V, 1MHz | 300mA | Military | MIL-PRF-19500/578 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N5554DIODE GEN PURP 1KV 5A AXIAL Microchip Technology |
118 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 1000 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 2 µA @ 1000 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
JANTX1N5712-1DIODE SCHOTTKY 20V 750MA DO35 Microchip Technology |
154 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Schottky | 20 V | 1 V @ 35 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 nA @ 16 V | 2pF @ 0V, 1MHz | 750mA | Military | MIL-PRF-19500/444 | Through Hole | DO-204AH (DO-35) | -65°C ~ 150°C |
|
1N5804USDIODE GEN PURP 100V 1A D-5A Microchip Technology |
1,182 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 100 V | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | 1A | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTX1N5551USDIODE GEN PURP 400V 5A B SQ-MELF Microchip Technology |
155 | - |
|
数据表 |
- | SQ-MELF, B | Bulk | Active | Standard | 400 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 400 V | - | 5A | Military | MIL-PRF-19500/420 | Surface Mount | B, SQ-MELF | -65°C ~ 175°C |