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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5550

1N5550

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

262 -
1N5550

数据表

- B, Axial Bulk Active Standard 200 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 200 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5802

1N5802

DIODE GEN PURP 50V 1A AXIAL

Microchip Technology

298 -
1N5802

数据表

- A, Axial Bulk Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N5807

1N5807

DIODE GEN PURP 50V 3A AXIAL

Microchip Technology

198 -
1N5807

数据表

- B, Axial Bulk Active Standard 50 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
JANTX1N5417

JANTX1N5417

DIODE GEN PURP 200V 3A AXIAL

Microchip Technology

204 -
JANTX1N5417

数据表

- B, Axial Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A Military MIL-PRF-19500/411 Through Hole B, Axial -65°C ~ 175°C
1N5615US

1N5615US

DIODE GEN PURP 200V 1A D-5A

Microchip Technology

630 -
1N5615US

数据表

- SQ-MELF, A Bulk Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
JANTX1N6642

JANTX1N6642

DIODE GEN PURP 75V 300MA DO35

Microchip Technology

6,996 -
JANTX1N6642

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 75 V 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 20 ns 500 nA @ 75 V 5pF @ 0V, 1MHz 300mA Military MIL-PRF-19500/578 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTX1N5554

JANTX1N5554

DIODE GEN PURP 1KV 5A AXIAL

Microchip Technology

118 -
JANTX1N5554

数据表

- B, Axial Bulk Active Standard 1000 V 1.3 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 2 µA @ 1000 V - 5A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
JANTX1N5712-1

JANTX1N5712-1

DIODE SCHOTTKY 20V 750MA DO35

Microchip Technology

154 -
JANTX1N5712-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 20 V 1 V @ 35 mA Fast Recovery =< 500ns, > 200mA (Io) - 150 nA @ 16 V 2pF @ 0V, 1MHz 750mA Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5804US

1N5804US

DIODE GEN PURP 100V 1A D-5A

Microchip Technology

1,182 -
1N5804US

数据表

- SQ-MELF, A Bulk Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A - - Surface Mount D-5A -65°C ~ 175°C
JANTX1N5551US

JANTX1N5551US

DIODE GEN PURP 400V 5A B SQ-MELF

Microchip Technology

155 -
JANTX1N5551US

数据表

- SQ-MELF, B Bulk Active Standard 400 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 400 V - 5A Military MIL-PRF-19500/420 Surface Mount B, SQ-MELF -65°C ~ 175°C
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