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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6630US

1N6630US

DIODE GEN PURP 900V 1.4A D-5B

Microchip Technology

3,216 -
1N6630US

数据表

- SQ-MELF, E Bulk Active Standard 900 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 4 µA @ 100 V - 1.4A - - Surface Mount D-5B -65°C ~ 150°C
1N6630U

1N6630U

DIODE GP 990V 1.4A SQ-MELF B

Microchip Technology

5,063 -
1N6630U

数据表

- SQ-MELF, B Bulk Active Standard 990 V 1.4 V @ 1.4 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 2 µA @ 990 V 40pF @ 10V, 1MHz 1.4A - - Surface Mount B, SQ-MELF -65°C ~ 150°C
UES1103SM/TR

UES1103SM/TR

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

3,147 -
UES1103SM/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 980 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Surface Mount A, SQ-MELF 175°C
UES1103SME3

UES1103SME3

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

4,736 -
UES1103SME3

数据表

- SQ-MELF, A Bulk Active Standard 150 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Surface Mount A, SQ-MELF 175°C
UES1103SM-1

UES1103SM-1

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

4,238 -
UES1103SM-1

数据表

- SQ-MELF, A Bulk Active Standard 150 V 980 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Surface Mount A, SQ-MELF -
JANTX1N5802URS

JANTX1N5802URS

DIODE GEN PURP 50V 1A A-MELF

Microchip Technology

4,984 -
JANTX1N5802URS

数据表

- SQ-MELF, A Bulk Active Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTX1N5804URS

JANTX1N5804URS

DIODE GEN PURP 100V 1A A-MELF

Microchip Technology

2,207 -
JANTX1N5804URS

数据表

- SQ-MELF, A Bulk Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
JANTX1N5806URS

JANTX1N5806URS

DIODE GEN PURP 150V 1A A-MELF

Microchip Technology

2,084 -
JANTX1N5806URS

数据表

- SQ-MELF, A Bulk Active Standard 150 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount A-MELF -65°C ~ 175°C
UES1103SM-1/TR

UES1103SM-1/TR

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

9,798 -
UES1103SM-1/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 980 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Surface Mount A, SQ-MELF -
UES1103SME3/TR

UES1103SME3/TR

DIODE GP 150V 2.5A A SQ-MELF

Microchip Technology

8,741 -
UES1103SME3/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 150 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Surface Mount A, SQ-MELF 175°C
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