Infineon Technologies|单个二极管 - 页 3

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
IDWD120E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	210	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	650 V	2.1 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	150A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD60E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	187	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	650 V	2.1 V @ 60 A	Fast Recovery =< 500ns, > 5A (Io)	99 ns	20 µA @ 650 V	-	100A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E120D7XKSA1 DIODE GEN PURP 1200V 116A TO247 Infineon Technologies	235	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	3 V @ 75 A	Fast Recovery =< 500ns, > 5A (Io)	195 ns	20 µA @ 1200 V	-	116A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD75E65E7XKSA1 DIODE GEN PURP 650V 100A TO247-2 Infineon Technologies	210	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	650 V	2.1 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	97 ns	20 µA @ 650 V	-	100A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD100E120D7XKSA1 DIODE GEN PURP 1200V 146A TO247 Infineon Technologies	224	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	3 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	205 ns	20 µA @ 1200 V	-	146A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD100E65E7XKSA1 DIODE GEN PURP 650V 150A TO247-2 Infineon Technologies	232	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	650 V	2.1 V @ 100 A	Fast Recovery =< 500ns, > 5A (Io)	98 ns	20 µA @ 650 V	-	150A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDFW40E65D1EXKSA1 DIODE GP 650V 42A TO247-3-AI Infineon Technologies	210	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	650 V	2.1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	76 ns	40 µA @ 650 V	-	42A	-	-	Through Hole	PG-TO247-3-AI	-40°C ~ 175°C
IDWD120E120D7XKSA1 DIODE GEN PURP 1200V 177A TO247 Infineon Technologies	129	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	3 V @ 120 A	Fast Recovery =< 500ns, > 5A (Io)	215 ns	20 µA @ 1200 V	-	177A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD140E120D7XKSA1 DIODE GEN PURP 1200V 207A TO247 Infineon Technologies	167	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	3 V @ 140 A	Fast Recovery =< 500ns, > 5A (Io)	225 ns	20 µA @ 1200 V	-	207A	-	-	Through Hole	PG-TO247-2-2	-40°C ~ 175°C
IDWD10G200C5XKSA1 SIC DISCRETE Infineon Technologies	240	-	询价单	数据表	CoolSiC™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	2000 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 2 kV	1140pF @ 1V, 100kHz	35A	-	-	Through Hole	PG-TO247-2-U01	-55°C ~ 175°C

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