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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDL06G65C5XUMA2DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies |
2,908 | - |
|
数据表 |
CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | 6A | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
|
IDK05G120C5XTMA1DIODE SIC 1.2KV 19.1A TO263-1 Infineon Technologies |
955 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | - | 33 µA @ 1200 V | 301pF @ 1V, 1MHz | 19.1A | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
IDDD10G65C6XTMA1DIODE SIL CARB 650V 29A HDSOP-10 Infineon Technologies |
1,323 | - |
|
数据表 |
CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | 29A | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
IDW10G65C5XKSA1DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies |
232 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
|
IDD08SG60CXTMA2DIODE SIL CARB 600V 8A TO252-3 Infineon Technologies |
178 | - |
|
数据表 |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | 8A | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
IDH10SG60CXKSA2DIODE SIL CARB 600V 10A TO220-1 Infineon Technologies |
330 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | 10A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
BAT 54 B5003DIODE SCHOTTKY 30V 200MA SOT23 Infineon Technologies |
7,668 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | 200mA | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
|
AIDK08S65C5ATMA1DISCRETE DIODES Infineon Technologies |
188 | - |
|
数据表 |
CoolSiC™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 248pF @ 1V, 1MHz | 8A | Automotive | AEC-Q101 | Surface Mount | PG-TO263-2 | -40°C ~ 175°C |
|
|
AIDK12S65C5ATMA1DISCRETE DIODES Infineon Technologies |
757 | - |
|
数据表 |
CoolSiC™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 363pF @ 1V, 1MHz | 12A | Automotive | AEC-Q101 | Surface Mount | PG-TO263-2 | -40°C ~ 175°C |
|
IDW16G65C5XKSA1DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies |
257 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | 16A | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
