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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
AUIRGSL4062D1

AUIRGSL4062D1

IGBT

Infineon Technologies

450 -
AUIRGSL4062D1

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SGH40N60UFTU

SGH40N60UFTU

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor

900 -
SGH40N60UFTU

数据表

- TO-3P-3, SC-65-3 Bulk Active - 600 V 160 A 2.6V @ 15V, 20A 160 W Through Hole 160µJ (on), 200µJ (off) Standard 40 A 97 nC 15ns/65ns - 300V, 20A, 10Ohm, 15V TO-3P - - -55°C ~ 150°C (TJ)
IRG8P75N65UD1-EPBF

IRG8P75N65UD1-EPBF

IRG8P75N65 - 650V 75A, IGBT

International Rectifier

2,250 -
IRG8P75N65UD1-EPBF

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRGP4072DPBF

IRGP4072DPBF

IRGP4072D - IGBT WITH ULTRAFAST

International Rectifier

4,000 -
IRGP4072DPBF

数据表

- TO-247-3 Bulk Obsolete Trench 300 V 120 A 1.7V @ 15V, 40A 180 W Through Hole 409µJ (on), 838µJ (off) Standard 70 A 73 nC 18ns/144ns - 240V, 40A, 10Ohm, 15V TO-247AC - 122 ns -55°C ~ 150°C (TJ)
IRG8P25N120KD-EPBF

IRG8P25N120KD-EPBF

IRG8P25N120 - DISCRETE IGBT WITH

International Rectifier

9,825 -
IRG8P25N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 45 A 2V @ 15V, 15A 180 W Through Hole 800µJ (on), 900µJ (off) Standard 40 A 135 nC 20ns/170ns - 600V, 15A, 10Ohm, 15V TO-247AD - 70 ns -40°C ~ 150°C (TJ)
IRG8P45N65UD1PBF

IRG8P45N65UD1PBF

IRG8P45N65 - 65V, 45A IGBT

International Rectifier

2,000 -
IRG8P45N65UD1PBF

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRG8P45N65UD1-EPBF

IRG8P45N65UD1-EPBF

IRG8P45N65 - 650V 45A, IGBT

International Rectifier

3,000 -
IRG8P45N65UD1-EPBF

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
AUIRGP4062D

AUIRGP4062D

AUIRGP4062D - AUTOMOTIVE IGBT DI

International Rectifier

1,174 -
AUIRGP4062D

数据表

- TO-247-3 Bulk Active - 600 V 72 A 1.95V @ 15V, 24A 250 W Through Hole 115µJ (on), 600µJ (off) Standard 48 A 50 nC 41ns/104ns - 400V, 24A, 10Ohm, 15V TO-247AC - 89 ns -55°C ~ 175°C (TJ)
IRG8P40N120KD-EPBF

IRG8P40N120KD-EPBF

IRG8P40N120 - DISCRETE IGBT WITH

International Rectifier

10,475 -
IRG8P40N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 75 A 2V @ 15V, 25A 305 W Through Hole 1.6mJ (on), 1.8mJ (off) Standard 60 A 240 nC 40ns/245ns - 600V, 25A, 10Ohm, 15V TO-247AD - 80 ns -40°C ~ 150°C (TJ)
IRGP4660DPBF

IRGP4660DPBF

IRGP4660 - DISCRETE IGBT WITH AN

International Rectifier

4,990 -
IRGP4660DPBF

数据表

- TO-247-3 Bulk Active - 600 V 144 A 1.9V @ 15V, 48A 330 W Through Hole 625µJ (on), 1.28mJ (off) Standard 100 A 140 nC 60ns/145ns - 400V, 48A, 10Ohm, 15V TO-247AC - 115 ns -55°C ~ 175°C (TJ)
RJH1DF7RDPQ-80#T2

RJH1DF7RDPQ-80#T2

RJH1DF7 - INSULATED GATE BIPOLAR

Renesas

400 -
RJH1DF7RDPQ-80#T2

数据表

- TO-247-3 Bulk Obsolete - 1350 V - 2.55V @ 15V, 35A 250 W Through Hole - Standard 60 A - 58ns/144ns - 600V, 35A, 5Ohm, 15V TO-247 - - 150°C (TJ)
IRGP4660D-EPBF

IRGP4660D-EPBF

IRGP4660 - DISCRETE IGBT WITH AN

International Rectifier

150 -
IRGP4660D-EPBF

数据表

- TO-247-3 Bulk Active - 600 V 144 A 1.9V @ 15V, 48A 330 W Through Hole 625µJ (on), 1.28mJ (off) Standard 100 A 140 nC 60ns/145ns - 400V, 48A, 10Ohm, 15V TO-247AD - 115 ns -55°C ~ 175°C (TJ)
RJH1BF7RDPQ-80#T2

RJH1BF7RDPQ-80#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas

6,080 -
RJH1BF7RDPQ-80#T2

数据表

- TO-247-3 Bulk Obsolete - 1100 V 100 A 2.35V @ 15V, 60A 250 W Through Hole - Standard 60 A - - - - TO-247 - - 150°C (TJ)
HKW40N120FPTA1

HKW40N120FPTA1

1200V 40A IGBT with 1200V 40A fu

Watech Electronics

1,800 -
HKW40N120FPTA1

数据表

- TO-247-3 Tape & Box (TB) Active Field Stop 1200 V 160 A 2V @ 15V, 40A 714 W Through Hole 2.92mJ (on), 2.84mJ (off) Standard 82 A 296 nC 68ns/274ns - 600V, 40A, 10Ohm, 15V TO-247-3 - 390 ns -40°C ~ 175°C (TJ)
IRG8P50N120KD-EPBF

IRG8P50N120KD-EPBF

IRG8P50N120 - DISCRETE IGBT WITH

International Rectifier

5,979 -
IRG8P50N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 105 A 2V @ 15V, 35A 350 W Through Hole 2.3mJ (on), 1.9mJ (off) Standard 80 A 315 nC 35ns/190ns - 600V, 35A, 5Ohm, 15V TO-247AD - 170 ns -40°C ~ 150°C (TJ)
AUIRG4PC40S-E

AUIRG4PC40S-E

AUIRG4PC40 - AUTOMOTIVE IGBT DIS

Infineon Technologies

292 -
AUIRG4PC40S-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRG8P60N120KD-EPBF

IRG8P60N120KD-EPBF

IRG8P60N120 - DISCRETE IGBT WITH

International Rectifier

8,826 -
IRG8P60N120KD-EPBF

数据表

- TO-247-3 Bulk Obsolete - 1200 V 120 A 2V @ 15V, 40A 420 W Through Hole 2.8mJ (on), 2.3mJ (off) Standard 100 A 345 nC 40ns/240ns - 600V, 40A, 5Ohm, 15V TO-247AD - 210 ns -40°C ~ 150°C (TJ)
RJH1BF7DPQ-E0#T2

RJH1BF7DPQ-E0#T2

RJH1BF7 - INSULATED GATE BIPOLAR

Renesas

217 -
RJH1BF7DPQ-E0#T2

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
HKW40N120FHEQ

HKW40N120FHEQ

1200V 40A IGBT with 1200V 40A fu

Watech Electronics

1,800 -
HKW40N120FHEQ

数据表

- TO-247-3 Tape & Box (TB) Active - 1200 V 160 A 2.4V @ 15V, 40A 441 W Through Hole 2.48mJ (on), 1.31mJ (off) Standard 80 A 307 nC 75ns/320ns AEC-Q101 600V, 40A, 12Ohm, 15V TO-247-3 Automotive 153 ns -40°C ~ 175°C (TJ)
HKW40N120FHRA

HKW40N120FHRA

1200V 40A IGBT with 1200V 25A SI

Watech Electronics

1,800 -
HKW40N120FHRA

数据表

- TO-247-3 Tape & Box (TB) Active - 1200 V 160 A 2.4V @ 15V, 40A 441 W Through Hole 1.55mJ (on), 1.68mJ (off) Standard 80 A 307 nC 90ns/362ns - 600V, 40A, 12Ohm, 15V TO-247-3 - - -40°C ~ 175°C (TJ)
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